NPT35015
GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz
This part has been discontinued. The suggested replacement part is: MAPC-A3006-AD000 / TR1 or MAPC-A3007-AD000 / TR1
The NPT35015 GaN HEMT is a power transistor optimized for 3.3 - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 18 W. This transistor is assembled in an industry standard surface mount plastic package.
Discontinued: Not recommended for new designs.
Product Specifications
- Part Number
- NPT35015
- Description
- GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz
- Min Frequency(MHz)
- 3300
- Max Frequency(MHz)
- 3800
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 18.0
- Gain(dB)
- 11.0
- Test Freq(GHz)
- 3.50
- Package
- SOIC8NE
- PSAT(dBm)
- 43
- Package Category
- Plastic
Features
- Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz
- Thermally Enhanced Industry Standard Package
- 100% RF tested
- Characterized for Operation up to 32V
- 1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency
- 25W P3dB peak Envelope Power
- 18W P3dB CW Power
- Subject to EAR99 Export Contyrol
- High Reliability Gold Metallization Process
- RoHS Compliant
Applications
- ISM
- Defense Communications
- land mobile radio
- Avionics
- VHF/UHF/L/S-Band Radar
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
- Surfacing Mounting Instructions - Footprint Guidelines
- Moisture Effects on the Soldering of Plastic Encapsulated Devices