NPT35015

GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz

The NPT35015 GaN HEMT is a power transistor optimized for 3.3 - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 18 W. This transistor is assembled in an industry standard surface mount plastic package.

Product Specifications

Part Number
NPT35015
Short Description
GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz
Min Frequency(MHz)
3300
Max Frequency(MHz)
3800
Supply Voltage(V)
28
PSAT(W)
18.0
Gain(dB)
11.0
Test Freq(GHz)
3.50
Package
SOIC8NE
Package Category
Plastic

Features

  • Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz
  • Thermally Enhanced Industry Standard Package
  • 100% RF tested
  • Characterized for Operation up to 32V
  • 1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency
  • 25W P3dB peak Envelope Power
  • 18W P3dB CW Power
  • Subject to EAR99 Export Contyrol
  • High Reliability Gold Metallization Process
  • RoHS Compliant

Applications

  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar

Order from MACOM

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