Product Detail

NPT35015
V1 GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz

The NPT35015 GaN HEMT is a power transistor optimized for 3.3 - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 18 W. This transistor is assembled in an industry standard surface mount plastic package.

Features
  • Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz
  • Thermally Enhanced Industry Standard Package
  • 100% RF tested
  • Characterized for Operation up to 32V
  • 1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency
  • 25W P3dB peak Envelope Power
  • 18W P3dB CW Power
  • Subject to EAR99 Export Contyrol
  • High Reliability Gold Metallization Process
  • RoHS Compliant
Applications
  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
Specifications
  • Supply Voltage: 28 V
  • Supply Voltage: 28 V
  • PSAT: 18 W
  • Gain: 11 dB
  • Test Freq: 3.5 GHz
  • Min Frequency: 3,300 MHz
  • Max Frequency: 3,800 MHz
  • Theta J-C: 6.3 C/W
Package
  • SOIC8NE
Package Category
  • Plastic
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPT35015D
Transistor, GaN, 3000-4000MHz
PO150S
In Stock: 10
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In Stock: 95
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