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Bipolar
Features
- NPN Silicon Microwave Power Transistors
- RoHS Compliant
- Hermetic Metal/Ceramic Package
- Internal Input and Output Impedance Matching
- Gold Metallization System
- Diffused Emitter Ballasting Resistors
- High Efficiency Inter-Digitized Geometry
- Broadband Class C Operation
- Common Base Configuration
Applications
- Aerospace and Defense
- ISM
Specifications
- Pout: 6 W
- Gain: 7 dB
- Bias Voltage: 28 V
- Efficiency: 45 %
- Min Frequency: 1,200 MHz
- Max Frequency: 1,400 MHz
Datasheet
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN3025 - Transistor Mounting and Soldering
- AN4002 - Recommendations For Long-Term Transistor Storage
- AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Package
- Flange Ceramic Pkg
Package Category
- Ceramic Flange Mount
Contact Info
| Part Number | Package | MACOM | Richardson RFPD | DigiKey | Mouser | Richardson Electronics |
|---|---|---|---|---|---|---|
|
PH1214-6M
Transistor, Bipolar, 6W, 1.20-1.40_GHz
|
CERAMIC |
In Stock: 11
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