Product Detail

UF28100V
RF Power MOSFET Transistor 100W, 100-500 MHz, 28V

     RF Power MOSFET   Transistor 100W, 100-500 MHz, 28V    

Features
  • N-channel Enhancement Mode Device
  • High Saturated Output Power
  • Lower Capacitances for Broadband Operation • High saturated output power • Lower noise figure than competitive devices
  • DMOS Structure
  • Lower Noise Figure than Competitive Devices
Applications
  • Aerospace and Defense
Specifications
  • Min Frequency: 100 MHz
  • Max Frequency: 500 MHz
  • Pout: 100 W
  • Gain: 10 dB
  • Efficiency: 50 %
  • Bias Voltage: 28 V
Package
  • Flange Ceramic Pkg
Package Category
  • Flange Mount
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
UF28100V
Transistor, 100W, 28V, 100-500MHz, Mosfet
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