Product Detail

UF28150J
RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V

     RF Power MOSFET   Transistor 150W, 100MHz-500MHz, 28V    

Features
  • DMOS Structure
  • Common Source Configuration
  • Lower Capacitance for Broadband Operation
Applications
  • Aerospace and Defense
Specifications
  • Min Frequency: 100 MHz
  • Max Frequency: 500 MHz
  • Pout: 150 W
  • Gain: 8 dB
  • Efficiency: 55 %
  • Bias Voltage: 28 V
Package
  • Flange Ceramic Pkg
Package Category
  • Ceramic Flange Mount
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
UF28150J
Transistor, Mosfet, 150W, 28V, 100-500MHz
CERAMIC
In Stock: 4
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In Stock: 10
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