XB1004-BD

Buffer Amplifier

MACOM's three stage 16.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a noise figure of 2.2 dB across the band. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Product Specifications

Part Number
XB1004-BD
Short Description
Buffer Amplifier 16.0-30.0 GHz
Min Frequency(MHz)
16000
Max Frequency(MHz)
30000
Gain(dB)
21.0
Output P1dB(dBm)
19.00
OIP3(dBm)
29.0
Package
DIE
Bias Current(mA)
100
NF(dB)
2.2
Package Category
Die/Bumped Die
Rohs
Yes

Features

  • High Dynamic Range
  • RoHS* Compliant
  • 100% Visual Inspection to MIL-STD-883 Method 2010
  • 100% On-Wafer RF, DC and Noise Figure Testing
  • +19.0 dBm P1dB Compression Point at Power Bias
  • 2.2 dB Noise Figure at Low Noise Bias
  • 21.0 dB Small Signal Gain
  • Low Noise or Power Bias Configurations
  • Excellent LO Driver/Buffer Amplifier
  • 260°C Reflow Compatible

Applications

  • ISM
  • Wireless Networking and Communication

Order from MACOM

XB1004-BD-000V
MMIC,DIE,BUF,16-30G,GEL PAK
XB1004-BD-000V Distributors