XB1005-BD

Buffer Amplifier

MACOM’s three stage 35.0-45.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a noise figure of 2.7 dB across the band. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, SATCOM and VSAT applications.

Product Specifications

Part Number
XB1005-BD
Short Description
Buffer Amplifier 35.0-45.0 GHz
Min Frequency(MHz)
35000
Max Frequency(MHz)
45000
Gain(dB)
23.0
Output P1dB(dBm)
16.00
OIP3(dBm)
26.0
Package
DIE
Bias Current(mA)
50
NF(dB)
2.7
Package Category
Die/Bumped Die
Rohs
Yes

Features

  • High Dynamic Range
  • RoHS* Compliant
  • 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
  • Wafer RF, DC and Noise Figure Testing
  • +16 dBm P1dB Compression at Power Bias ? 100% On
  • 2.7 dB Noise Figure at Low Noise Bias
  • 23.0 dB Small Signal Gain
  • Low Noise or Power Bias Configurations
  • Excellent LO Driver/Buffer Amplifier
  • 260°C Reflow Compatible

Applications

  • Aerospace and Defense
  • ISM
  • MILCOM
  • SATCOM
  • VSAT
  • Wireless Networking and Communication

Order from MACOM

XB1005-BD-EV1
EVAL MOD,XB1005-BD,K-TYPE