XB1007-BD

Buffer Amplifier

MACOM’s two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses MACOM's GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Product Specifications

Part Number
XB1007-BD
Short Description
Buffer Amplifier 4.0-11.0 GHz
Min Frequency(MHz)
4000
Max Frequency(MHz)
11000
Gain(dB)
23.0
Output P1dB(dBm)
20.00
OIP3(dBm)
30.0
Package
DIE
Bias Current(mA)
100
NF(dB)
4.5
Package Category
Die/Bumped Die
Rohs
Yes

Features

  • Excellent Transmit LO/Output Buffer Stage
  • RoHS* Compliant
  • 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
  • 100% On-Wafer RF, DC and Output Power Testing
  • Variable Gain with Adjustable Bias
  • 4.5 dB Noise Figure
  • 23.0 dB Small Signal Gain
  • Compact Size
  • +20.0 dBm P1dB Compression Point
  • 260°C Reflow Compatible

Applications

  • Aerospace and Defense
  • ISM
  • MILCOM
  • SATCOM
  • VSAT
  • Wireless Networking and Communication

Order from MACOM

XB1007-BD
Buffer Amplifier