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Amplifier
MACOM's two stage 4.0-11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. The device is ideally suited as an LO or RF buffer stage with broadband performance at a very low cost. The device comes in an RoHS compliant 3x3mm QFN surface mount package offering excellent RF and thermal properties. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Features
- Excellent Transmit LO/Output Buffer StagE
- Variable Gain with Adjustable Bias
- 4.5 dB Noise Figure
- +19.0 dBm P1dB Compression Point
- 23.0 dB Small Signal Gain
- 3x3mm, QFN
- 100% RF, DC and Output Power
Applications
- Aerospace and Defense
- ISM
- Wireless Networking and Communication
Specifications
- Min Frequency: 4,000 MHz
- Max Frequency: 11,000 MHz
- Gain: 23 dB
- Output P1dB: 19 dBm
- OIP3: 31 dBm
- Bias Current: 100 mA
- NF: 5 dB
- Bias Voltage: 4 V
Datasheet
Model Data (Sparameters)
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- M513 - Tape and Reel Packaging for Surface Mount Components
- S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
- S2083 - Surface Mounting Instructions for PQFN Packages
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN-0004357 - Low Cost Active Bias Circuit for GaAs FET Amplifiers and Data Spreadsheet - AN-0004357 - Low Cost Active Bias Circuit for GaAs FET Amplifiers and Data Spreadsheet
Package
- 3mm PQFN-16LD
Package Category
- Plastic Surface Mount
Marking
- B1007
Lead Finish
- 100% matte tin plate followed by a post-plating annealing of 1 hr at 150 C
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