XB1008-BD

Buffer Amp

MACOM’s two stage 10.0-21.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Product Specifications

Part Number
XB1008-BD
Short Description
Buffer Amplifier 10.0-21.0 GHz
Min Frequency(MHz)
10000
Max Frequency(MHz)
21000
Gain(dB)
18.0
Output P1dB(dBm)
20.00
OIP3(dBm)
30.0
Package
DIE
Bias Current(mA)
100
NF(dB)
5.5
Package Category
Die/Bumped Die
Rohs
Yes

Features

  • Excellent Transmit LO/Output Buffer Stage ? Compact Size ? 18.0 dB Small Signal Gain ? ? ? ? ? ?
  • RoHS* Compliant
  • 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010
  • 100% On-Wafer RF, DC & Output Power Testing
  • Variable Gain with Adjustable Bias
  • 5.5 dB Noise Figure
  • +20.0 dBm P1dB Compression Point
  • 260°C Reflow Compatible

Applications

  • Aerospace and Defense
  • ISM
  • Wireless Networking and Communication

Order from MACOM

XB1008-BD-EV1
EVAL,XB1008-BD
XB1008-BD-EV1 Distributors