MACOM’s two stage 10.0-21.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +20.0 dBm P1dB output compression point. The device also provides variable gain regulation with adjustable bias. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Microwave and Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.