XD1001-BD
Distributed Amplifier
MACOM’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications.
Product Specifications
- Part Number
- XD1001-BD
- Description
- Distributed Amplifier
- Min Frequency(MHz)
- 18000
- Max Frequency(MHz)
- 50000
- Gain(dB)
- 17.0
- Output P1dB(dBm)
- 15.00
- OIP3(dBm)
- 24.0
- Bias Current(mA)
- 160
- Package Category
- Die
Features
- Ultra Wide Band Driver Amplifier
- RoHS* Compliant
- 260°C Reflow Compatible
- 100% Visual Inspection to MIL-STD-883 Method 2010
- 100% On-Wafer RF, DC and Output Power Testing
- +15.0 dBm P1dB Compression Point
- 30 dB Gain Control
- 5.0 dB Noise Figure
- 17.0 dB Small Signal Gain
- Fiber Optic Modulator Driver
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN-0004357 - Low Cost Active Bias Circuit for GaAs FET Amplifiers and Data Spreadsheet