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Distributed Amplifier
MACOM’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications.
Features
- Ultra Wide Band Driver Amplifier
- RoHS* Compliant
- 260°C Reflow Compatible
- 100% Visual Inspection to MIL-STD-883 Method 2010
- 100% On-Wafer RF, DC and Output Power Testing
- +15.0 dBm P1dB Compression Point
- 30 dB Gain Control
- 5.0 dB Noise Figure
- 17.0 dB Small Signal Gain
- Fiber Optic Modulator Driver
Applications
- Aerospace and Defense
- ISM
Specifications
- Min Frequency: 18,000 MHz
- Max Frequency: 50,000 MHz
- Gain: 17 dB
- Gain Flatness: 1 dB
- NF: 5 dB
- OIP3: 24 dBm
- Output P1dB: 15 dBm
- Bias Voltage: 5 V
- Bias Current: 160 mA
Datasheet
Model Data (Sparameters)
Application Notes
- AN3009 - S-Parameter S2P File Format Guide
- AN3018 - Known Good Die Delivery Specification
- M513 - Tape and Reel Packaging for Surface Mount Components
- M570 - Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- AN-0004357 - Low Cost Active Bias Circuit for GaAs FET Amplifiers and Data Spreadsheet - AN-0004357 - Low Cost Active Bias Circuit for GaAs FET Amplifiers and Data Spreadsheet
Package Category
- Die/Bumped Die
ROHS
- Yes
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