XD1001-BD

Distributed Amplifier

MACOM’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications.

Product Specifications

Part Number
XD1001-BD
Short Description
Distributed Amplifier 18-50 GHz
Min Frequency(MHz)
18000
Max Frequency(MHz)
50000
Gain(dB)
17.0
OIP3(dBm)
24
Output P1dB(dBm)
15.00
Noise Figure(dB)
5.0
Package Category
Die
ROHS
Yes

Features

  • Ultra Wide Band Driver Amplifier
  • RoHS* Compliant
  • 260°C Reflow Compatible
  • 100% Visual Inspection to MIL-STD-883 Method 2010
  • 100% On-Wafer RF, DC and Output Power Testing
  • +15.0 dBm P1dB Compression Point
  • 30 dB Gain Control
  • 5.0 dB Noise Figure
  • 17.0 dB Small Signal Gain
  • Fiber Optic Modulator Driver

Applications

  • Aerospace and Defense
  • ISM

Order from MACOM

XD1001-BD-000V
MMIC,DIE,DAMP,18-50G,G=17dB,VR
XD1001-BD-000V Distributors