Product Detail

Distributed Amplifier
MACOM’s 18.0-50.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave and wideband military applications.
  • Ultra Wide Band Driver Amplifier
  • RoHS* Compliant
  • 260°C Reflow Compatible
  • 100% Visual Inspection to MIL-STD-883 Method 2010
  • 100% On-Wafer RF, DC and Output Power Testing
  • +15.0 dBm P1dB Compression Point
  • 30 dB Gain Control
  • 5.0 dB Noise Figure
  • 17.0 dB Small Signal Gain
  • Fiber Optic Modulator Driver
  • Aerospace and Defense
  • ISM
  • Min Frequency: 18,000 MHz
  • Max Frequency: 50,000 MHz
  • Gain: 17 dB
  • Output P1dB: 15 dBm
  • Bias Voltage: 5 V
  • Bias Current: 160 mA
  • Gain Flatness: 1 dB
  • Noise Figure: 5 dB
  • OIP3: 24 dBm
Package Category
  • Die/Bumped Die
  • Yes
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
MMIC, DIE, DAMP, 18-50G, G=17dB, VR
In Stock: 1100

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