XL1000-BD
Low Noise Amplifier
The XL1000-BD is a 3-stage 20 - 40 GHz GaAs MMIC low noise amplifier that has a small signal gain of 20 dB with a noise figure of 2 dB across the band. This MMIC uses a GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Product Specifications
- Part Number
- XL1000-BD
- Description
- Low Noise Amplifier
- Min Frequency(MHz)
- 20000
- Max Frequency(MHz)
- 40000
- Gain(dB)
- 20.0
- Output P1dB(dBm)
- 9.00
- OIP3(dBm)
- 16.0
- Bias Current(mA)
- 35
- NF(dB)
- 2.0
- Package Category
- Die/Bumped Die
Features
- Self Bias Architecture
- RoHS* Compliant
- 100% Visual Inspection to MIL-STD-883 Method 2010
- 100% On-Wafer RF, DC and Noise Figure Testing
- +9.0 dBm P1dB Compression Point
- 2.0 dB Noise Figure
- 20.0 dB Small Signal Gain
- 3.0 or 5.0 V Operation
- Small Size
- 260°C Reflow Compatible
Applications
- Millimeter-wave Point-to-Point Radio
- LMDS
- SATCOM
- VSAT