The XL1000-BD is a 3-stage 20 - 40 GHz GaAs MMIC low noise amplifier that has a small signal gain of 20 dB with a noise figure of 2 dB across the band. This MMIC uses a GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.