XL1000-BD

Low Noise Amplifier

The XL1000-BD is a 3-stage 20 - 40 GHz GaAs MMIC low noise amplifier that has a small signal gain of 20 dB with a noise figure of 2 dB across the band. This MMIC uses a GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

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Product Specifications

Part Number
XL1000-BD
Short Description
Low Noise Amplifier 20.0-40.0 GHz
Min Frequency(MHz)
20000
Max Frequency(MHz)
40000
Gain(dB)
20.0
OIP3(dBm)
16.0
Output P1dB(dBm)
9.00
NF(dB)
2.00
Package Category
Die/Bumped Die

Features

  • Self Bias Architecture
  • RoHS* Compliant
  • 100% Visual Inspection to MIL-STD-883 Method 2010
  • 100% On-Wafer RF, DC and Noise Figure Testing
  • +9.0 dBm P1dB Compression Point
  • 2.0 dB Noise Figure
  • 20.0 dB Small Signal Gain
  • 3.0 or 5.0 V Operation
  • Small Size
  • 260°C Reflow Compatible

Applications

  • LMDS
  • Millimeter-wave Point-to-Point Radio
  • SATCOM
  • VSAT

Technical Resources

Datasheet

Application Notes

Model Data (Sparameters)

Order from MACOM

XL1000-BD-000V
MMIC,DIE,LNA,20-40G,GEL PAK
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