XL1002-BD

Low Noise Amplifier

MACOM’s three stage balanced 20.0-36.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 23.0 dB with a noise figure of 2.6 dB across the band. This MMIC uses MACOM’s GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Product Specifications

Part Number
XL1002-BD
Short Description
Low Noise Amplifier 20.0-36.0 GHz
Min Frequency(MHz)
20000
Max Frequency(MHz)
36000
Gain(dB)
23.0
OIP3(dBm)
16.0
Output P1dB(dBm)
4.00
NF(dB)
2.60
Package Category
Die/Bumped Die

Features

  • Balanced Design
  • 260°C Reflow Compatible
  • 100% Visual Inspection to MIL-STD-883 Method 2010
  • 100% On-Wafer RF, DC and Noise Figure Testing
  • 2.6 dB Noise Figure
  • 23.0 dB Small Signal Gain
  • Self-biased Architecture
  • Excellent Input/Output Match
  • RoHS* Compliant

Applications

  • ISM
  • Wireless Networking and Communication

Order from MACOM

XL1002-BD-000V
MMIC,DIE,LNA,20-36G,GEL PAK
XL1002-BD-000V Distributors