MACOM’s three stage 27.0 to 32.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +33 dBm saturated output power. It can alos be used in low power linear applications, with and OIP3 of 40dBm. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.