XP1027-BD
Power Amplifier
MACOM’s three stage 27.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35.5 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Product Specifications
- Part Number
- XP1027-BD
- Description
- Power Amplifier
- Min Frequency(MHz)
- 27000
- Max Frequency(MHz)
- 31000
- Gain(dB)
- 25.0
- Output P1dB(dBm)
- 34.00
- OIP3(dBm)
- 43.0
- Bias Current(mA)
- 2110
- Package
- Die
- Package Category
- Die
Features
- Ka-Band 4 W Power Amplifier
- RoHS* Compliant and
- 100% Visual Inspection to MIL-STD-883 Method 2010
- 100% On-Wafer RF, DC and Output Power Testing
- +43.0 dBm Output Third Order Intercept (OIP3)
- +35.5 dBm Saturated Output Power
- 21.0 dB Small Signal Gain
- Balanced Design Provides Good Input/Output Match
- 260°C Reflow Compatible
Applications
- Wireless Networking and Communication