XP1027-BD

Power Amplifier

MACOM’s three stage 27.0-31.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35.5 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Product Specifications

Part Number
XP1027-BD
Short Description
Power Amplifier 27.0-31.0 GHz
Min Frequency(MHz)
27000
Max Frequency(MHz)
31000
Gain(dB)
25.0
OIP3(dBm)
43.0
Output P1dB(dBm)
34.00
Package
Die
Package Category
Die
ROHS
Yes

Features

  • Ka-Band 4 W Power Amplifier
  • RoHS* Compliant and
  • 100% Visual Inspection to MIL-STD-883 Method 2010
  • 100% On-Wafer RF, DC and Output Power Testing
  • +43.0 dBm Output Third Order Intercept (OIP3)
  • +35.5 dBm Saturated Output Power
  • 21.0 dB Small Signal Gain
  • Balanced Design Provides Good Input/Output Match
  • 260°C Reflow Compatible

Applications

  • Wireless Networking and Communication

Technical Resources

Data Sheet


Order from MACOM

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