XP1080-QU

Amplifier

The XP1080-QU is a four stage 37.0-40.0 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 25.0 dB with a +38.0 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 7x7mm QFN Surface Mount Package offering excellent RF and thermal properties. This device has been designed for use in 38 GHz Point-to-Point Microwave Radio applications.

Product Specifications

Part Number
XP1080-QU
Description
Amplifier
Min Frequency(MHz)
37000
Max Frequency(MHz)
40000
Gain(dB)
25.0
Output P1dB(dBm)
27.00
PSAT(dBm)
29
OIP3(dBm)
38.0
Bias Current
1000
Package
7mm SMD-16LD
Package Category
SMD
Rohs
Yes

Features

  • Linear Power Amplifier
  • 260°C Reflow Compatible
  • RoHS* Compliant
  • Lead-Free 7 mm 28-lead SMD Package
  • +38.0 dBm OIP3
  • +27.0 dBm P1dB Compression Point
  • 25.0 dB Small Signal Gain
  • Output Power Adjust
  • On-Chip Power Detector

Applications

  • ISM
  • Wireless Networking and Communication

Order from MACOM

XP1080-QU-0N00
MMIC,SMD,PA,30dBm Psat,7x7QFN,BULK
XP1080-QU-0N00 Distributors
XP1080-QU-EV1
EVAL,XP1080-QU-0N00