XX1007-BD

Doubler

MACOM’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device. The XX1007-BD has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing capacitor eliminating the need for external capacitor. This MMIC uses MACOM’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has integrated ESD structures for protection and surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Product Specifications

Part Number
XX1007-BD
Short Description
Doubler 13.5-17.0/27.0-34.0 GHz
Min Input Frequency(MHz)
13500
Max Input Frequency(MHz)
17000
Min Output Frequency(MHz)
27000
Max Output Frequency(MHz)
34000
Input Power(dBm)
8.0
Mulitply Factor
2
Package
DIE
Package Category
Die

Features

  • Integrated Gain, Doubler and Driver Stages
  • RoHS* Compliant
  • 260°C Reflow Compatible
  • 100% Visual Inspection to MIL-STD-883 Method 2010
  • 100% On-Wafer RF, DC & Output Power Testing
  • On-Chip ESD Protection
  • 40.0 dBc Fundamental Suppression
  • +21.0 dBm Output Saturated Power
  • Self-biased Architecture

Applications

  • Wireless Networking and Communication

Order from MACOM

XX1007-BD-000V
MMIC,DIE,DBLR,IN=13.5-17G,OUT=27-37G,VR
XX1007-BD-000V Distributors