The XX1010-QT is a 14.625-15.0 / 29.25-30.0 GHz
GaAs MMIC doubler that integrates a gain stage,
passive doubler and driver amplifier onto a single
device. This device has a self-biased architecture
requiring a single positive supply (+4.5V) only and
integrated on-chip bypassing and DC blocking
capacitors eliminating the need for any external
components.
This device uses InGaAs pHEMT device technology,
and is based upon electron beam lithography to
ensure high repeatability and uniformity.
The XX1010-QT has integrated ESD structures for
protection and comes in a low cost 3 mm QFN
package.
The device is well suited for millimeter wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.