RF Power Amplifier - GaN

RF Power Amplifier

MACOM GaN RF power amplifier solutions are designed with the latest GaN-on-Si and GaN-on-SiC technologies.  Our MACOM PURE CARBIDE series of GaN-on-SiC power amplifiers is our most recent addition and offers high performance and reliability for the most demanding applications.  Our expanding GaN portfolio is designed to address the challenging requirements of Aerospace & Defense applications and 5G wireless infrastructure.  MACOM GaN products deliver output power levels ranging from 2W to over 2KW and exhibit best in class RF performance with respect to gain and efficiency.

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releaseDate Part Number Ordering Short Description Min Frequency (MHz) Max Frequency (MHz) Supply Voltage (V) PSAT (W) Gain (dB) Efficiency Test Freq (GHz) Package Model Data (Sparameters) Package Category Datasheet Lead-Free Theta J-C (C/W) Application Notes Modelithics Url Features Frequency Range (GHz) Brightcove Video Product Image Product Logo
 
 
 
 
 
 
 
NPTB00004A Buy GaN Amplifier 28 V, 5 W, DC - 6 GHz
0 6000 28 5 17 >50
2.5 SOIC8NE
NPTB00004A_28V_50mA.S2P
NPTB00004A_28V_75mA.S2P
NPTB00004A_28V_250mA.S2P
NPTB00004A_28V_Vg-3V.S2P
NPTB00004A_28V_100mA.S2P
Plastic
NPTB00004A.pdf
Yes
15 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
https://www.modelithics.com/mvp/macom
57 % Drain Efficiency @ 2.5 GHz

GaN on Si HEMT D-Mode Transistor

Tunable from DC - 6 GHz

Industry standard SOIC plastic package

28V Operation

DC - 6
NP00004A_SOIC-8NE_new_logo.jpg
NPA1003QA Buy GaN Amplifier 28 V, 5 W, 0.020 - 1.5 GHz
20 1500 28 5 18 >50
1 4x4 mm
NPA1003_28V_50mA.S2P
NPA1003_28V_100mA.S2P
NPA1003_28V_m3V.S2P
Plastic Surface Mount
NPA1003QA.pdf
Yes
12 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
GaN on Si HEMT D-Mode Amplifier

Suitable for Linear & Saturated Applications

Broadband Operation from 20 - 1500 MHz

16 dB Gain @ 1 GHz

28V Operation

42% PAE @ 1 GHz

100% RF Tested

50 Ω Input / Output Matched

Lead-Free 4 mm 16-lead QFN plastic Package

RoHS* Compliant and 260°C Reflow Compatible

.02 - 1.5
4x4 mm-16 lead PQFN.jpg
2019/12/31 NPT2018 Buy GaN Amplifier 50 V, 12 W, DC-3.5 GHz
0 3500 50 12.5 19 59
2.5 3 x 6 mm 14-Lead PDFN
Plastic
NPT2018.pdf
Yes
9.9 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Suitable for Linear and Saturated Applications

GaN on Si HEMT D-Mode Transistor

Tunable from DC - 3.5 GHz

50 V Power Operation

16 dB Gain @ 2.5 GHz

56% Drain Efficiency @ 2.5 GHz

Lead-Free 3 x 6 mm 14-Lead PDFN Package

100% RF Tested

RoHS* Compliant

DC - 3.5
NPT2018_DFN3x6-14_new_logo.jpg
NPT25100B Buy GaN Amplifier 28 V, 125 W, 2.1 - 2.7 GHz
2100 2700 28 125 16.5 26
2.5 Flange Ceramic Pkg
Ceramic
NPT25100.pdf
Yes
1.8 AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
High Reliability Gold Metallization Process

Thermally Enhanced Industry Standard Package

100% RF Tested

Characterized for Operation up to 32V

10W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency

90W P3dB CW Power

125W P3dB Peak Envelope Power

RoHS Compliant

2.1 - 2.7
AC780B-new_logo_small.jpg
NPTB00025B Buy GaN Amplifier 28 V, 25 W, DC - 4 GHz
0 4000 28 25 13 >50
3 Flange Ceramic Pkg
Ceramic
NPTB00025.pdf
Yes
5.3
Optimized for Broadband Operation from DC - 4000MHz

Thermally Enhanced Industry Standard Package

100% RF Tested

Characterized for Operation up to 32V

10W P3dB CW Broadband Power from 500-1000MHz

25W P3dB CW Narrowband Power

Subject to EAR99 Export Control

High Reliability Gold Metallization Process

RoHS Compliant

DC - 4
NPA1007 Buy GaN Amplifier 28 V, 10W, 0.020 - 2.5 GHz
20 2500 28 10 10 >50
2 6x5mm 8-lead PDFN
6x5mm 8-lead PDFN
NPA1007.pdf
Yes
GaN on Si HEMT D-Mode Amplifier

100% RF Tested

43% Drain Efficiency @ 2500 MHz

12.5 dB Gain @ 2500 MHz

28 V Operation

Broadband operation from 20 - 2500 MHz

Suitable for linear and saturated applications

Halogen-Free “Green” Mold Compound

Lead-Free 6 x 5 mm 8-lead PDFN Package

Fully Matched at Input, Unmatched at Output

RoHS* Compliant

.02 - 2.5
NPA1007.png
MAGx-011086 Inquire GaN Amplifier 28 V, 4 W, DC - 6 GHz
0 6000 28 4 9 >50
5.8 4x4 mm
Plastic
MAGX-011086.pdf
Yes
17 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
GaN on Si HEMT D-Mode Amplifier

Suitable for Linear & Saturated Applications

28V Operation

Tunable from DC - 6 GHz

9 dB Gain @ 5.8 GHz

45% Drain Efficiency @ 5.8 GHz

100% RF Tested

Thermally-Enhanced 4 mm 24-Lead QFN

RoHS* Compliant

DC - 6.0
4x4_24-lead PQFN.jpg
NPA1008 Buy GaN Amplifier 28 V, 5 W, 0.020 - 2.7 GHz
20 2700 28 5 12 >45
1.9 4x4 mm
PQFN
NPA1008.pdf
Yes
GaN on Si HEMT D-Mode Integrated Amplifier

100% RF Tested

45% Drain Efficiency

28 V Operation

50 Ω Input Matched

Broadband Operation from 20 - 2700 MHz

Suitable for linear and saturated applications

Halogen-Free “Green” Mold Compound

Lead-Free 4 x 4 mm 24-lead PQFN Package

RoHS* Compliant

20 - 2700 MHz
NPA1008.PNG
NPA1006 Buy GaN Amplifier 28 V, 12 W, 0.020 - 1.0 GHz
20 1000 28 12.5 14 >45
0.9 6x5mm 8-lead PDFN
NPA1006.pdf
Yes
GaN on Si HEMT D-Mode Amplifier

Lead-Free 6 x 5 mm 8-lead PDFN Package

100% RF Tested

65% Drain Efficiency @ 900 MHz

14 dB Gain @ 900 MHz

28 V Operation

50 Ω Input Matched, Output Unmatched

Broadband operation from 20 - 1000 MHz

Suitable for linear and saturated applications

Halogen-Free “Green” Mold Compound

RoHS* Compliant

20-1000 MHZ
NPA1006.PNG
2018/12/18 MAMG-100227-010C0L Buy GaN Amplifier 28 V, 10 W, 0.225-2.6 GHz
225 2600 28 10 22 40
2.6 MD1
MAMG-100227-010C0L.pdf
Yes
Compact Size (14 x 18 mm2)

GaN-on-Si Technology

CW Output Power >10 W, 40% PAE and 22 dB Power Gain

Lead-Free Package with Heat Sink

RoHS* Compliant

.225-2.6
5979178384001
MAMG-100227-010_both sides_shadow_6-inches.png
2020/04/02 MAGX-100027-015S0P Buy GaN Amplifier 50 V, 15 W, DC - 2.7GHz
0 2700 50 15 17.2 60
2.5 6 x 3 mm DFN
Plastic
MAGX-100027-015S0P.pdf
Yes
Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 15 W Output Power

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

DC -2.7 GHz
6 x 3 DFN.jpg
2020/03/17 MAGX-100027-050C0P Buy GaN Amplifier 50 V, 50 W, DC - 2.7GHz
0 2700 50 50 16.8 72
2.5 TO-272S-2
MAGX_100027_050C0P_DK_ver1.zip
Plastic
MAGX-100027-050C0P.pdf
Yes
3.3
Suitable for Linear & Saturated Applications

50 V Operation

CW and Pulsed Operation: 50 W Output Power

100% RF Tested

Internally Pre-matched

RoHS* Compliant

260°C Reflow Compatible

DC - 2700
TO-272S-2_RGB.png
2020/05/18 MAGX-100027-300C0P Buy GaN Amplifier 50 V, 300 W, DC - 2.7 GHz
0 2700 50 300 16.3 2 TO-272S-4I
MAGX-100027-300C0P.pdf
Yes
AN-0004125.pdf
Suitable for Linear and Saturated Applications

Pair of Isolated, Symmetric Amplifiers

CW and Pulsed Operation: 300 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

DC - 2.7 GHz
2020/05/29 MAGX-100027-100C0P Buy GaN Amplifier 50 V, 100 W, DC - 2.7 GHz
0 2700 50 100 15.1 59
2.5 TO-272S-2
MAGX-100027-100C0P.pdf
Yes
AN-0004125.pdf
Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 100 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

DC - 2.7 GHz
TO-272S-2.JPG
2020/06/15 MAGE-102425-300S00 Inquire GaN Amplifier 50 V, 300 W, 2.4 - 2.5GHz
2400 2500 50 300 16.7 75
2.45 AC-780S-2
Air Cavity
MAGE-102425-300S00.pdf
Yes
AN-0004363_High Power Ceramic Packaged Devices.pdf
Optimized for RF Energy Applications

Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 300 W Output Power

Internally Pre-Matched

50 V Operation

100% RF Tested

RoHS* Compliant

2.4 - 2.5 GHz
MAGe-102425-300G00.jpg
NPT25015 Buy GaN Amplifier 28 V, 23 W, DC - 3 GHz
0 3000 28 23 14 2.5 SOIC8NE
Plastic
NPT25015.pdf
Yes
6.3 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz

23 W P3dB peak envelope power (PEP)

1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz

100% RF tested

Thermally-enhanced industry standard package

High reliability gold metallization process

Subject to EAR99 Export Control

Lead-Free

RoHS Compliant

DC - 3
NP00004A_SOIC-8NE_new_logo.jpg
NPT35015 Buy GaN Amplifier 28 V, 18 W, 3.3 - 3.8 GHz
3300 3800 28 18 11 3.5 SOIC8NE
Plastic
NPT35015.pdf
Yes
6.3 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz

Thermally Enhanced Industry Standard Package

100% RF tested

Characterized for Operation up to 32V

1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency

25W P3dB peak Envelope Power

18W P3dB CW Power

Subject to EAR99 Export Contyrol

High Reliability Gold Metallization Process

RoHS Compliant

3.3 -3.8
NP00004A_SOIC-8NE_new_logo.jpg
NPT1004D Buy GaN Amplifier 28 V, 45 W, DC - 4 GHz
0 4000 28 45 13 55
2.5 SOIC8NE
Plastic
NPT1004D.pdf
Yes
4.3 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for Pulsed, WiMAX, W-CDMA, LTE, & other light thermal load applications from DC - 4 GHz

45 W P3dB CW Power

13.5 dB Small Signal Gain

55% Efficiency @ P3dB

Thermally-Enhanced Surface Mount SOIC Package

High Reliability Gold Metallization Process

Subject to EAR99 Export Control

DC - 3
NP00004A_SOIC-8NE_new_logo.jpg
2021/02/17 MAPC-A1100
Inquire GaN Amplifier 50 V, 65 W, DC - 3.5 GHz - MACOM PURE CARBIDE
0 3500 50 65 18 71
3.5 AC-360S-2
Ceramic
MAPC-A1100.pdf
Yes
3.7
MACOM PURE CARBIDE™ Amplifier Series

Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 65 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

DC - 3.5
AC360S2.JPG
MACOM_PURECARBIDE_Blue_TM.jpg
2021/02/17 MAPC-A1000
Inquire GaN Amplifier 50 V, 25 W, 30 - 2700 MHz - MACOM PURE CARBIDE
30 2700 50 25 13 51
2.7 7.0 x 6.5 mm DFN
Plastic
Inquire Yes
5.5
MACOM PURE CARBIDE™ Amplifier Series

Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 25 W Output Power

50Ω Input Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

.3 - 2.7
7_0x6_5mmDFN.png
MACOM_PURECARBIDE_Blue_TM.jpg
2020/08/28 MAGX-101011-700E00 Inquire GaN Amplifier 50 V, 700 W, 1.0 - 1.1 GHz
1000 1100 50 700 19.3 70
1.09 AC-780B-2
Air Cavity
MAGX-101011-700E00.pdf
Yes
0.33
Optimized for Avionics Applications

Pulsed Operation: 700 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

1.0 - 1.1 GHz
AC780B.png
2020/09/30 MAGe-100809-500G00 Inquire GaN Amplifier 50 V, 500 W, 896 - 928 MHz
896 928 50 500 18 0.93 AC-780S-4
MAGE-100809-500G00.pdf
Yes
100% RF Tested
Suitable for Linear and Saturated Applications

Pair of Isolated, Symmetric Amplifiers

CW and Pulsed Operation: 500 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

RoHS* Compliant

896 - 928 MHz
2021/02/17 MAPC-A1101-AS000
Inquire GaN Amplifier 50 V, 85 W, DC - 3.5 GHz - MACOM PURE CARBIDE
0 3500 50 85 15 70
3.5 AC-360S-2
air cavity ceramic package
MAPC-A1101.pdf
Yes
3.1
MACOM PURE CARBIDE™ Amplifier Series

Suitable for Linear & Saturated Applications

CW & Pulsed Operation: 85 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

DC - 3.5 GHz
AC360S2.JPG
MACOM_PURECARBIDE_Blue_TM.jpg
2021/02/17 MAPC-A1102
Inquire GaN Amplifier 50 V, 150 W, DC - 3.5 GHz - MACOM PURE CARBIDE
0 3500 50 150 13 65
3.5 AC-360S-2
air cavity ceramic package
MAPC-A1102.pdf
Yes
1.6
MACOM PURE CARBIDE™ Amplifier Series

Suitable for Linear & Saturated Applications

CW & Pulsed Operation: 150 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

DC - 3.5 GHz
AC360S2.JPG
MACOM_PURECARBIDE_Blue_TM.jpg
2021/02/17 MAPC-A1500
Inquire GaN Amplifier 65 V, 2600 W, 960 - 1215 MHz - MACOM PURE CARBIDE
960 1215 65 2600 18.5 66.2
1.06 AC-1230S-4
air cavity ceramic package
Inquire Yes
0.07
MACOM PURE CARBIDE™ Amplifier Series

Suitable for Linear & Saturated Applications

Pulsed Operation: 2600 W Output Power @ 65V

Pulsed Operation: 2000 W Output Power @ 50V

Internally Pre-Matched

260°C Reflow Compatible

65 V Operation

100% RF Tested

RoHS* Compliant

960 - 1215 MHz
MACOM_PURECARBIDE_Blue_TM.jpg
2021/02/17 MAPC-A1501
Inquire GaN Amplifier 65 V, 1300 W, 960 - 1215 MHz - MACOM PURE CARBIDE
960 1215 65 1300 17.2 64.5
1.06 AC-780B-2
air cavity ceramic package
Inquire Yes
0.15
MACOM PURE CARBIDE™ Amplifier Series

Suitable for Linear & Saturated Applications

Pulsed Operation: 1300 W Output Power @ 65V

Pulsed Operation: 1000 W Output Power @ 50V

Internally Pre-Matched

260°C Reflow Compatible

65 V Operation

100% RF Tested

RoHS* Compliant

960 - 1215 MHz
MACOM_PURECARBIDE_Blue_TM.jpg
2021/02/16 MAPC-A1103
Inquire GaN Amplifier 50 V, 270 W DC - 2.7 GHz - MACOM PURE CARBIDE
0 2700 50 270 18.4 68.2
2.6 AC-650S-4
Inquire Yes
0.93 AN-0004363_High Power Ceramic Packaged Devices.pdf
MACOM PURE CARBIDE™ Amplifier Series

Suitable for Linear & Saturated Applications

CW & Pulsed Operation: 270 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

100% RF Tested

DC - 2.7 GHz
AC-650S-4.JPG
MACOM_PURECARBIDE_Blue_TM.jpg
2020/12/01 MAGB-103740-008B0P Inquire GaN Amplifier 50 V, 8 W, 3.4 - 4.0GHz, n77
3700 4000 50 8 17.9 16.2
3.9 4x4 mm
MAGB-103740-008B0P.pdf
Suitable for Linear and Saturated Applications

Optimized for Cellular Base Station Applications

Designed for Digital Predistortion Error Correction Systems

High Terminal Impedances for Broadband Performance

48 V Operation

100 % RF Tested

RoHS* Compliant

4x4DFN.JPG
2020/12/23 MAGB-103440-010B0P Inquire GaN Amplifier 50 V, 10 W, 3.4 - 4.0GHz, n78, n77 & n48
3400 4000 50 10 18.1 53.7
3.8 4x4 mm
MAGB-103440-010B0P.pdf
Suitable for Linear and Saturated Applications

Optimized for Cellular Base Station Applications

Designed for Digital Predistortion Error Correction Systems

High Terminal Impedances for Broadband Performance

48 V Operation

100 % RF Tested

RoHS* Compliant

2020/12/23 MAGB-102327-010B0P Inquire GaN Amplifier 50 V, 10 W, 2.3 - 2.7GHz, n40 & n41
2300 2700 50 8 17.2 72.2
2.5 4x4 mm
MAGB-102327-010B0P.pdf
Suitable for Linear and Saturated Applications

Optimized for Cellular Base Station Applications

Designed for Digital Predistortion Error Correction Systems

High Terminal Impedances for Broadband Performance

48 V Operation

100 % RF Tested

RoHS* Compliant

2020/02/12 MAGB-101836-025B0P Inquire GaN Amplifier 50 V, 25 W, 1.8 - 3.6GHz
1800 3600 50 25 16.9 29
3.5 5 x 7 mm QFN
MAGB-101836-025B0P.pdf
Optimized for Cellular Base Station Applications

High Terminal Impedances for Broadband Performance

50 V Operation

100% RF Tested

RoHS* Compliant

5x7mmqfn.JPG
2019/11/26 MAGB-103438-020S0P Inquire GaN Amplifier 50 V, 20 W, 3.4 - 3.8GHz, Dual
3400 3800 50 20 17 28
3.5 5 x 7 mm QFN
MAGB-103438-020S0P.pdf
Optimized for Cellular Base Station Applications

Designed for Digital Predistortion Error Correction Systems

Suitable for Quadrature Combined & Symmetrical Doherty Driver Amplifier Applications

High Terminal Impedances for Broadband Performance

50 V Operation

100% RF Tested

RoHS* Compliant

5x7mmqfn.JPG