RF Power Amplifier - GaN-on-Si - Pulsed

RF Power Transistor - GaN on Si - Pulsed

At MACOM we offer a broad range of pulsed and linear RF power amplifier products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power products are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using bipolar, MOSFET, and now GaN technologies to meet our customers’ most demanding needs. Our GaN-on-Silicon products, offered as discrete and integrated amplifiers utilizing a  0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency, and ruggedness over wide operating bandwidths.

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releaseDate Part Number Ordering Short Description Frequency Range (GHz) Supply Voltage (V) PSAT (W) Gain (dB) Test Freq (GHz) Package Theta J-C (C/W) Datasheet Max Frequency (MHz) Min Frequency (MHz) Package Category Lead-Free Application Notes Features Product Image
 
 
 
 
 
 
 
NPT25015 Buy GaN on Silicon Broadband Transistor, DC-3 GHz, 23W, 28V
DC - 3
28 23 14 2.5 SOIC8NE
6.3 NPT25015.pdf
3000 0 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz

23 W P3dB peak envelope power (PEP)

1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz

100% RF tested

Thermally-enhanced industry standard package

High reliability gold metallization process

Subject to EAR99 Export Control

Lead-Free

RoHS Compliant

NP00004A_SOIC-8NE_new_logo.jpg
NPT35015D Buy GaN on Silicon Broadband Transistor, 3.3-3.8 GHz, 23W, 28V
3.3 -3.8
28 18 11 3.5 SOIC8NE
6.3 NDS-005 Rev 5 NPT35015.pdf
3800 3300 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz

Thermally Enhanced Industry Standard Package

100% RF tested

Characterized for Operation up to 32V

1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency

25W P3dB peak Envelope Power

18W P3dB CW Power

Subject to EAR99 Export Contyrol

Lead-Free

High Reliability Gold Metallization Process

RoHS Compliant

NP00004A_SOIC-8NE_new_logo.jpg
NPT1004D Buy GaN on Silicon Broadband Transistor, DC-3 GHz, 45W, 28V
DC - 3
28 45 13 2.5 SOIC8NE
4.3 NDS-010 Rev 4 NPT1004.pdf
3000 0 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
2-Stage High Power MMIC Amplifier

RTH of 2.7°C/W Resulting in 20+ Years of Operation at Max Flange of 90°C at PSAT

Typical 50W Broadband Saturated Power Output Across 1.0-2.0GHz

Unmatched Output for Tuning Flexibility

Input Matched to 50 Ohms

Subject to EAR99 Export Control

NP00004A_SOIC-8NE_new_logo.jpg