RF Power Amplifier - GaN-on-Si - Pulsed

RF Power Transistor - GaN on Si - Pulsed

At MACOM we offer a broad range of pulsed and linear RF power amplifier products--discrete devices, modules, and pallets designed to operate from DC to 6 GHz. Our high power products are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our product portfolio leverages MACOM’s more than 60-year heritage of providing both standard and custom solutions using bipolar, MOSFET, and now GaN technologies to meet our customers’ most demanding needs. Our GaN-on-Silicon products, offered as discrete transistors and integrated amplifiers utilizing a  0.5 micron HEMT process and exhibiting excellent RF performance with respect to power, gain, gain flatness, efficiency,  and ruggedness over wide operating bandwidths.

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releaseDate Part Number Ordering Short Description Frequency Range (GHz) Supply Voltage (V) PSAT (W) Gain (dB) Efficiency (%) Test Freq (GHz) Package Theta J-C (C/W) Datasheet Max Frequency (MHz) Min Frequency (MHz) Model Data (Sparameters) Package Category ROHS Lead-Free Application Notes Type Features Lead Finish Compatible Parts Product Image Brightcove Video ADS & SPICE Model Info
 
 
 
 
 
 
 
 
NPT25015 Buy Gallium Nitride 28V, 23W RF Power Transistor
DC - 3
28 23 14 2.5 SOIC8NE
6.3 NPT25015.pdf
3000 0 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
23 W P3dB peak envelope power (PEP)
1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz
100% RF tested
Thermally-enhanced industry standard package
High reliability gold metallization process
Subject to EAR99 Export Control
Lead-Free
RoHS Compliant
NP00004A_SOIC-8NE_new_logo.jpg
NPT35015D Buy Gallium Nitride 28V, 18W RF Power Transistor
3 - 4
28 18 11 3.5 SOIC8NE
6.3 NDS-005 Rev 5 NPT35015.pdf
4000 3000 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz
Thermally Enhanced Industry Standard Package
100% RF tested
Characterized for Operation up to 32V
1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency
25W P3dB peak Envelope Power
18W P3dB CW Power
Subject to EAR99 Export Contyrol
Lead-Free
High Reliability Gold Metallization Process
RoHS Compliant
NP00004A_SOIC-8NE_new_logo.jpg
NPT1004D Buy Gallium Nitride 28V, 45W RF Power Transistor
DC - 3
28 45 13 2.5 SOIC8NE
4.3 NDS-010 Rev 4 NPT1004.pdf
3000 0 Plastic
Yes
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
2-Stage High Power MMIC Amplifier
RTH of 2.7°C/W Resulting in 20+ Years of Operation at Max Flange of 90°C at PSAT
Typical 50W Broadband Saturated Power Output Across 1.0-2.0GHz
Unmatched Output for Tuning Flexibility
Input Matched to 50 Ohms
Subject to EAR99 Export Control
NP00004A_SOIC-8NE_new_logo.jpg
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