RF Power Amplifier - Aerospace & Defense and Multimarket

RF Power Transistors - GaN on Si  -  CW

Today, MACOM offers a growing portfolio of GaN products designed for aerospace and defense applications like military communications, radar, jammers and avionics.  We also offer general-purpose high-power amplifiers which can be used in aerospace and defense applications and also in industrial, scientific and medical applications.  Our MACOM PURE CARBIDE portfolio is designed with high performance, reliability, and ruggedness in mind.   

MACOM has more than 60 year heritage of providing both standard and custom high power solutions for the aerospace and defense industry.  We are committed to supporting our legacy Bipolar and MOSFET products as well as adding new technologies in order satisfy our customer’s needs for high performance solutions for their most difficult applications.

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releaseDate Part Number Ordering Short Description Frequency Range (GHz) Supply Voltage (V) PSAT (W) Gain (dB) Test Freq (GHz) Package Efficiency Model Data (Sparameters) Min Frequency (MHz) Max Frequency (MHz) Package Category Datasheet Lead-Free Theta J-C (C/W) Application Notes Features Product Image Brightcove Video Modelithics Url
 
 
 
 
 
 
 
NPT2021 Buy GaN on Silicon General Purpose Amplifier, DC - 2.5 GHz, 48 V, 45 W
DC - 2.5 GHz
48 45 17 2.5 TO272
>55
NPT2021_48V_175mA_preliminary.s2p
NPT2021_48V_Vg=-3p0V_preliminary.s2p
NPT2021_48V_350mA_preliminary.s2p
NPT2021_48V_525mA_preliminary.s2p
0 2500 Plastic
NPT2021.pdf
Yes
1.9 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN-0004125 - Mounting Methods for High Power RF Plastic Devices
GaN on Si HEMT D-Mode Amplifier

55 % Drain Efficiency at 2.5 GHz

100 % RF Tested

TO-272 Package

RoHS* Compliant and 260°C reflow compatible

16.5 dB Gain at 2.5 GHz

48 V Operation

Tunable from DC - 2.5 GHz

Suitable for linear and saturated applications

PPT2022_TO272_small.jpg
NPTB00004A Buy GaN Power Transistor, 28 V, 5 W DC - 6 GHz
DC - 6
28 5 17 2.5 SOIC8NE
>50
NPTB00004A_28V_50mA.S2P
NPTB00004A_28V_75mA.S2P
NPTB00004A_28V_250mA.S2P
NPTB00004A_28V_Vg-3V.S2P
NPTB00004A_28V_100mA.S2P
0 6000 Plastic
NPTB00004A.pdf
Yes
15 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
57 % Drain Efficiency @ 2.5 GHz

GaN on Si HEMT D-Mode Transistor

Tunable from DC - 6 GHz

Industry standard SOIC plastic package

28V Operation

NP00004A_SOIC-8NE_new_logo.jpg
https://www.modelithics.com/mvp/macom
2014/12/04 NPT2022 Buy GaN on Silicon General Purpose Amplifier, DC - 2 GHz, 48 V, 100 W
DC - 2.0
48 100 20 0.9 TO272
>60
NPT2022_48V 300mA.s2p
NPT2022_48V Vgs-3.s2p
NPT2022_48V 900mA.s2p
NPT2022_48V 600mA.s2p
0 2000 Plastic
NPT2022.pdf
Yes
1.3 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN-0004125 - Mounting Methods for High Power RF Plastic Devices
GaN on Si HEMT D-Mode Amplifier

20 dB Gain @ 900 MHz

60 % Drain Efficiency @ 900 MHz

100 % RF Tested

48 V Operation

Tunable from DC - 2 GHz

Suitable for linear and saturated applications

RoHS* Compliant and 260°C reflow compatible

TO-272 Package

PPT2022_TO272_small.jpg
NPT1012B Buy GaN Power Transistor, 28 V, 25 W DC - 4 GHz
DC - 4
28 25 13 3 Flange Ceramic Pkg
>50
0 4000 Ceramic
NPT1012B.pdf
Yes
4 AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
Optimized for Broadband Operation from DC-4000MHz

High Efficiency from 14 - 28V

10-20W P3dB CW Power from 30-1000MHz in application board with >50% drain efficiency

16-20W P3dB CW Power from 1000-2500MHz in application board with >45% drain efficiency

25W P3dB CW Power at 3000MHz

4.0 °C/W RTH with Maximum TJ Rating of 200 °C

Robust up to 10:1 VSWR mismatch at all angles with no device damage at 90 °C flange

Subject to EAR99 Export Control

AC200B-new_logo.jpg
https://www.modelithics.com/mvp/macom
NPA1003QA Buy GaN on Silicon Power Amplifier, 20 - 1500 MHz, 28 V, 5 W
.02 - 1.5
28 5 18 1 4mm PQFN-16LD
>50
NPA1003_28V_50mA.S2P
NPA1003_28V_100mA.S2P
NPA1003_28V_m3V.S2P
20 1500 Plastic Surface Mount
NPA1003QA.pdf
Yes
12 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
GaN on Si HEMT D-Mode Amplifier

Suitable for Linear & Saturated Applications

Broadband Operation from 20 - 1500 MHz

16 dB Gain @ 1 GHz

28V Operation

42% PAE @ 1 GHz

100% RF Tested

50 Ω Input / Output Matched

Lead-Free 4 mm 16-lead QFN plastic Package

RoHS* Compliant and 260°C Reflow Compatible

4x4 mm-16 lead PQFN.jpg
2019/12/31 NPT2018 Buy Gallium Nitride 48V, 12.5W, DC-3.5 GHz HEMT
DC - 3.5
50 12.5 19 2.5 3 x 6 mm 14-Lead PDFN
59
0 3500 Plastic
NPT2018.pdf
Yes
9.9 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Suitable for Linear and Saturated Applications

GaN on Si HEMT D-Mode Transistor

Tunable from DC - 3.5 GHz

50 V Power Operation

16 dB Gain @ 2.5 GHz

56% Drain Efficiency @ 2.5 GHz

Lead-Free 3 x 6 mm 14-Lead PDFN Package

100% RF Tested

RoHS* Compliant

NPT2018_DFN3x6-14_new_logo.jpg
NPT2020 Inquire GaN on Silicon General Purpose Amplifier, DC - 3.5 GHz, 48 V, 50 W
DC - 3.5 GHz
48 50 17 2.1 Flange Ceramic Pkg
>60
NPT2020_48V_175mA.s2p
NPT2020_48V_Vgs=-3V.s2p
NPT2020_48V_350mA.s2p
NPT2020_48V_525mA.s2p
0 3500 Ceramic
NPT2020.pdf
Yes
2.3 AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
Suitable for Linear and Saturated Applications

GaN on Si HEMT Depletion Mode Amplifier

55% Drain Efficiency @ 3.5 GHz

RoHS* Compliant and 260°C Reflow Compatible

48V Operation

Tunable from DC - 3.5 GHz

100% RF Tested

Standard Package with Bolt Down Flange

13.5 dB Gain @ 3.5 GHz

AC360B-new_logo_small.jpg
NPT25100B Buy GaN Power Amplifier, 28 V, 125 W 2.1 - 2.7 GHzGHz, 125W, 28V
2.1 - 2.7
28 125 16.5 2.5 Flange Ceramic Pkg
26
2100 2700 Ceramic
NPT25100.pdf
Yes
1.8 AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
High Reliability Gold Metallization Process

Thermally Enhanced Industry Standard Package

100% RF Tested

Characterized for Operation up to 32V

10W Linear Power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency

90W P3dB CW Power

125W P3dB Peak Envelope Power

RoHS Compliant

AC780B-new_logo_small.jpg
NPTB00025B Buy GaN Power Transistor, 28 V, 25 W DC - 4 GHz
DC - 4
28 25 13 3 Flange Ceramic Pkg
>50
0 4000 Ceramic
NPTB00025.pdf
Yes
5.3
Optimized for Broadband Operation from DC - 4000MHz

Thermally Enhanced Industry Standard Package

100% RF Tested

Characterized for Operation up to 32V

10W P3dB CW Broadband Power from 500-1000MHz

25W P3dB CW Narrowband Power

Subject to EAR99 Export Control

High Reliability Gold Metallization Process

RoHS Compliant

NPT2010 Buy GaN on Silicon General Purpose Amplifier, DC - 2.2 GHz, 48 V, 100 W
DC - 2.2 GHz
48 100 17 2.1 Flange Ceramic Pkg
>60
NPT2010_48V_300mA.s2p
NPT2010_48V_600mA.s2p
NPT2010_48V_Vgs=-3V.s2p
NPT2010_48V_900mA.s2p
2200 Ceramic
NPT2010.pdf
Yes
1.7 AN-0004363 - Mounting Methods for High Power RF Ceramic Packaged Devices
Suitable for Linear and Saturated Applications

High Drain Efficiency (>60%)

GaN on Si HEMT D-Mode Amplifier

48V Operation

Tunable from DC-2.2 GHz

15 dB Gain @ 2.15 GHz

61% Drain Efficiency @ 2.15 GHz

100% RF Tested

Industry Standard Metal-Ceramic Package

RoHS* Compliant

AC360B-new_logo_small.jpg
NPA1007 Buy GaN on Silicon Power Amplifier, 20 - 2500 MHz, 28 V, 10 W
.02 - 2.5
28 10 10 2 6x5mm 8-lead PDFN
>50
20 2500 6x5mm 8-lead PDFN
NPA1007.pdf
Yes
GaN on Si HEMT D-Mode Amplifier

100% RF Tested

43% Drain Efficiency @ 2500 MHz

12.5 dB Gain @ 2500 MHz

28 V Operation

Broadband operation from 20 - 2500 MHz

Suitable for linear and saturated applications

Halogen-Free “Green” Mold Compound

Lead-Free 6 x 5 mm 8-lead PDFN Package

Fully Matched at Input, Unmatched at Output

RoHS* Compliant

NPA1007.png
NPT25100P Inquire GaN on Silicon Broadband Amplifier, 2.1-2.7 GHz, 125W, 28V
2.1 - 2.7
28 125 16 2.5 Flange Ceramic Pkg
>55
2100 2700 Ceramic
Inquire Yes
1.8
Optimized for CW, Pulsed, WiMAX, W-CDMA, LTE and Other Applications from 2100 – 2700MHz

10W linear power @ 2.0% EVM for Single Carrier OFDM, 10.3dB Peak/avg, 10MHz Channel Bandwidth, 16.5dB Gain, 26% Efficiency

Characterized for Operation up to 32V

100% RF Tested

Thermally Enhanced Industry Standard Package

High Reliability Gold Metallization Process

Lead-Free

125W P3dB Peak Envelope Power

90W P3dB CW Power

Subject to ECCN 3A982.a.1 Export Control

RoHS Compliant

AC780P-small_new_logo.jpg
NPTB00025AB Inquire GaN on Silicon Broadband Transistor, DC-4 GHz, 25W, 28V
DC - 4
28 25 13 3 Flange Ceramic Pkg
>60
0 4000 Ceramic
Inquire Yes
5.3
Optimized for Broadband Operation from DC - 4000MHz

10W P3dB CW Broadband Power from 500-1000MHz

Characterized for Operation up to 32V

100% RF Tested

Thermally Enhanced Industry Standard Package

Subject to EAR99 Export Control

25W P3dB CW Narrowband Power

Lead-Free

RoHS compliant

AC200B-new_logo.jpg
MAGx-011086 Inquire GaN on Silicon General Purpose Amplifier, DC - 6 GHz, 28 V, 4 W
DC - 6.0
28 4 9 5.8 4mm PQFN-24LD
>50
0 6000 Plastic
MAGX-011086.pdf
Yes
17 AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
S2083 - Surface Mounting Instructions for PQFN Packages
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
GaN on Si HEMT D-Mode Amplifier

Suitable for Linear & Saturated Applications

28V Operation

Tunable from DC - 6 GHz

9 dB Gain @ 5.8 GHz

45% Drain Efficiency @ 5.8 GHz

100% RF Tested

Thermally-Enhanced 4 mm 24-Lead QFN

RoHS* Compliant

4x4_24-lead PQFN.jpg
NPA1008 Buy GaN on Silicon Power Amplifier, 20 - 2700 MHz, 28 V, 5 W
20 - 2700 MHz
28 5 12 1.9 4x4mm 24-lead PQFN
>45
20 2700 PQFN
NPA1008.pdf
Yes
GaN on Si HEMT D-Mode Integrated Amplifier

100% RF Tested

45% Drain Efficiency

28 V Operation

50 Ω Input Matched

Broadband Operation from 20 - 2700 MHz

Suitable for linear and saturated applications

Halogen-Free “Green” Mold Compound

Lead-Free 4 x 4 mm 24-lead PQFN Package

RoHS* Compliant

NPA1008.PNG
NPA1006 Buy GaN on Silicon General Purpose Amplifier, 20 - 1000 MHz, 28 V, 12.5 W
20-1000 MHZ
28 12.5 14 0.9 6x5mm 8-lead PDFN Package
>45
20 1000 PDFN Plastic Package
NPA1006.pdf
Yes
GaN on Si HEMT D-Mode Amplifier

Lead-Free 6 x 5 mm 8-lead PDFN Package

100% RF Tested

65% Drain Efficiency @ 900 MHz

14 dB Gain @ 900 MHz

28 V Operation

50 Ω Input Matched, Output Unmatched

Broadband operation from 20 - 1000 MHz

Suitable for linear and saturated applications

Halogen-Free “Green” Mold Compound

RoHS* Compliant

NPA1006.PNG
2018/12/18 MAMG-100227-010C0L Buy GaN on Silicon Broadband Amplifier, 0.225-2.6 GHz, 10W, 28V
.225-2.6
28 10 22 2.6 MD1
40
2600 225 MAMG-100227-010C0L.pdf
Yes
Compact Size (14 x 18 mm2)

GaN-on-Si Technology

CW Output Power >10 W, 40% PAE and 22 dB Power Gain

Lead-Free Package with Heat Sink

RoHS* Compliant

MAMG-100227-010_both sides_shadow_6-inches.png
5979178384001
2020/04/02 MAGX-100027-015S0P Buy 15 W GaN-on-Si in Surface Mount Plastic Package
DC -2.7 GHz
50 15 17.2 2500 6 x 3 mm DFN
60
0 2700 Plastic
MAGX-100027-015S0P.pdf
Yes
Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 15 W Output Power

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

6 x 3 DFN.jpg
2020/03/17 MAGX-100027-050C0P Buy GaN Amplifier 50 V, 50 W, DC - 2700 MHz
DC - 2700
50 50 16.8 2500 TO-272S-2
72
MAGX_100027_050C0P_DK_ver1.zip
0 2700 Plastic
MAGX-100027-050C0P.pdf
Yes
3.3
Suitable for Linear & Saturated Applications

50 V Operation

CW and Pulsed Operation: 50 W Output Power

100% RF Tested

Internally Pre-matched

RoHS* Compliant

260°C Reflow Compatible

TO-272S-2_RGB.png
2020/05/18 MAGX-100027-300C0P Buy GaN Amplifier 50 V, 300 W DC - 2.7 GHz
DC - 2.7 GHz
50 300 16.3 TO-272S-4I
0 2700 MAGX-100027-300C0P.pdf
Yes
AN-0004125.pdf
Suitable for Linear and Saturated Applications

Pair of Isolated, Symmetric Amplifiers

CW and Pulsed Operation: 300 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

2020/05/29 MAGX-100027-100C0P Buy GaN Amplifier 50 V, 100 W DC - 2.7 GHz
DC - 2.7 GHz
50 100 15.1 TO-272S-2
59
0 2700 MAGX-100027-100C0P.pdf
Yes
AN-0004125.pdf
Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 100 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

TO-272S-2.JPG
2020/06/15 MAGE-102425-300S00 Inquire GaN Power Amplifier 50 V, 300 W
2.4 - 2.5 GHz
50 300 16.7 2.45 AC-780S-2
75
2400 2500 Air Cavity
MAGE-102425-300S00.pdf
Yes
AN-0004363_High Power Ceramic Packaged Devices.pdf
Optimized for RF Energy Applications

Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 300 W Output Power

Internally Pre-Matched

50 V Operation

100% RF Tested

RoHS* Compliant

MAGe-102425-300G00.jpg
NPT25015 Buy GaN on Silicon Broadband Transistor, DC-3 GHz, 23W, 28V
DC - 3
28 23 14 2.5 SOIC8NE
0 3000 Plastic
NPT25015.pdf
Yes
6.3 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz

23 W P3dB peak envelope power (PEP)

1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz

100% RF tested

Thermally-enhanced industry standard package

High reliability gold metallization process

Subject to EAR99 Export Control

Lead-Free

RoHS Compliant

NP00004A_SOIC-8NE_new_logo.jpg
NPT35015 Buy GaN Power Transistor, 28 V, 18 W 3.3 - 3.8 GHz3.3-3.8 GHz, 23W, 28V
3.3 -3.8
28 18 11 3.5 SOIC8NE
3300 3800 Plastic
NPT35015.pdf
Yes
6.3 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for CW, Pulsed, WiMAX, and Other Applications from 3300 - 3800 MHz

Thermally Enhanced Industry Standard Package

100% RF tested

Characterized for Operation up to 32V

1.7W linear power @ 2% EVM for single carrier OFDM, 10.3dB peak/average, 10.3dB @ 0.01% probability on CCDF, 10.5dB gain, 18% drain efficiency

25W P3dB peak Envelope Power

18W P3dB CW Power

Subject to EAR99 Export Contyrol

High Reliability Gold Metallization Process

RoHS Compliant

NP00004A_SOIC-8NE_new_logo.jpg
NPT1004D Buy GaN Power Transistor, 28 V, 45 W DC - 4 GHz
DC - 3
28 45 13 2.5 SOIC8NE
55
0 4000 Plastic
NPT1004D.pdf
Yes
4.3 AN3009 - S-Parameter S2P File Format Guide
M513 - Tape and Reel Packaging for Surface Mount Components
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
M538 - Surfacing Mounting Instructions - Footprint Guidelines
S2080 - Moisture Effects on the Soldering of Plastic Encapsulated Devices
Optimized for Pulsed, WiMAX, W-CDMA, LTE, & other light thermal load applications from DC - 4 GHz

45 W P3dB CW Power

13.5 dB Small Signal Gain

55% Efficiency @ P3dB

Thermally-Enhanced Surface Mount SOIC Package

High Reliability Gold Metallization Process

Subject to EAR99 Export Control

NP00004A_SOIC-8NE_new_logo.jpg
2020/08/05 MAPC-A1100 Inquire GaN Amplifier 50 V, 65 W
DC - 3.5
50 65 18 3500 AC-360S-2
71
0 3500 Ceramic
Inquire Yes
3.7
Part of the PURE CARBIDE™ Amplifier series

Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 65 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

AC360S2.JPG
2020/08/05 MAPC-A1000 Inquire GaN Amplifier 50 V, 25 W
3 - 2.7
50 25 13 2500 7.0 x 6.5 mm DFN
51
30 2700 Plastic
Inquire Yes
5.5
Part of the PURE CARBIDE™ Amplifier series

Suitable for Linear and Saturated Applications

CW and Pulsed Operation: 25 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

7_0x6_5mmDFN.png
2020/08/28 MAGX-101011-700E00 Inquire GaN Amplifier 50 V, 700 W Pulsed3 1.0 - 1.1 GHz
1.0 - 1.1 GHz
50 700 19.3 1.09 AC-780B-2
70
1000 1100 Air Cavity
MAGX-101011-700E00.pdf
Yes
0.33
Optimized for Avionics Applications

Pulsed Operation: 700 W Output Power

Internally Pre-Matched

260°C Reflow Compatible

50 V Operation

100% RF Tested

RoHS* Compliant

AC780B.png