RF Power Transistors - Silicon MOSFET

mosfet

At MACOM we offer a broad range of TMOS and DMOS RF power MOSFET transistor products as discrete devices from DC to 1.0 GHz. Our high power MOSFET transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all gold metallization fabrication processes ensures high performance and long term reliability. Our MOSFET transistors are designed to provide our customers with solid solutions for their demanding applications. 

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releaseDate Part Number Ordering Short Description Min Frequency (MHz) Max Frequency (MHz) Pout (W) Gain (dB) Efficiency (%) Package Package Category Datasheet Lead-Free Application Notes Features Product Image Type
 
 
 
 
 
2003/01/29 MRF176GU Buy The RF MOSFET Line 200/150W, 500MHz, 50V
5 400 150 12 45 Flange Ceramic Pkg
Ceramic Flange Mount
MRF176GU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix); Output power — 150 W, Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)

MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (typ. Efficiency — 55% typ.

MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)

Low Crss — 7.0 pF Typ @ VDS = 50 V

Low Thermal Resistance

100% Ruggedness Tested at Rated Output Power

MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
TMOS
2002/10/21 MRF151A Buy MOSFET
5 175 150 13 40 Flange Ceramic Pkg
Ceramic Flange Mount
MRF151A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN4001 - 300 Watt Class E Amplifier Using MRF151A
Enhanced Thermal Performance

Higher Power Dissipation

Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%

Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability

MRF151A - Case P.JPG
TMOS
2002/06/19 DU2880V Buy RF Power MOSFET Transistor 80W, 2-175MHz, 28V
2 175 80 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU2880V.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturated Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

RF PT SI - DU2880V.JPG
DMOS
2001/11/01 DU2860T Buy RF Power MOSFET Transistor 60W, 2-175MHz, 28V
2 175 60 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU2860T.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

RF PT- SI _DU2860T.JPG
DMOS
2001/10/24 MRF175LU Buy The RF MOSFET Line 100W, 400MHz, 28V
5 400 100 8 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF175LU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Guaranteed Performance: MRF175LU @ 28 V, 400 MHz (“U” Suffix), Output power — 100 W, Power gain — 10 dB (Typ.), Efficiency — 55% (Typ.)

Low Crss — 20 pF Typ @ VDS = 28 V

Low Thermal Resistance

100% Rruggedness Tested at Rated Output Power

MRF175LU-CASE-333-04-STYLE-2.JPG
TMOS
2001/10/24 MRF176GV Buy The RF MOSFET Line 200/150W, 500MHz, 50V
5 225 200 15 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF176GU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Electrical Performance: MRF176GU @ 50 V, 400 MHz (“U” Suffix), Output Power — 150 W,Power Gain — 14 dB (Typ.), Efficiency — 50% (Typ.)

MRF176GV @ 50 V, 225 MHz (“V” Suffix); Output power — 200 W, Power Gain — 17 dB (Typ.), Efficiency — 55% (Typ.)

Low Crss — 7.0 pF Typ @ VDS = 50 V

Low Thermal Resistance

100% Ruggedness Tested at Rate Output Power

MRF176GU - MRF1756GV Case 375-04 Style 2.JPG
TMOS
2001/09/29 MRF140 Buy The RF MOSFET Line 30W, to 400MHz, 28V
5 150 150 15 40 Flange Ceramic Pkg
Ceramic Flange Mount
MRF140.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode

IMD(d11) (150 W PEP): –60 dB (Typ.)

Superior High Order IMD

Specified 28 Volts, 30 MHz Characteristics - Output power = 150 watts, Power gain = 15 dB (Typ.), Efficiency = 40% (Typ.)

100%Test for Load Mismatch at all Phase with 30:1 VSWR

IMD(d3) (150 W PEP): –30 dB (Typ.)

MRF140 - Case 211-11 Style 2.JPG
TMOS
2001/09/20 MRF175GU Buy The RF MOSFET Line 200/150W, 500MHz, 28V
5 400 150 12 55 Flange Ceramic Pkg
Ceramic Flange Mount
MRF175GU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance: Output Power — 200 W, Power Gain — 14 dB (Typ.) Efficiency — 65% (Typ.)

100% RuggednessTested at a Rated output Power

MRF175GV @ 28 V, 225 MHz (“V” Suffix)

Low Crss — 20 pF typ @ VDS = 28 V

Low Thermal Resistance

MRF175GU - Case 375-04 Style 2.JPG
TMOS
2001/09/09 MRF148A Buy Linear RF Power MOSFET 30W, to 175MHz, 50V
5 175 30 18 40 Flange Ceramic Pkg
Flange Mount
MRF148A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Superior High Order IMD - IMD(d11) (30W PEP): –60 dB (Typ.), IMD(d3) (30W PEP): –35 dB (Typ.)

100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR

Lower Reverse Transfer Capacitance (3.0 pF typ.)

Specified 50V, 30MHz characteristics:18dB (Typ.), Output power: 30W, Efficiency: 40% (Typ.)

MRF148A - Case 211-07, Style 2.JPG
TMOS
2001/09/15 MRF173CQ Buy The RF MOSFET Line 80W, 175MHz, 28V
5 175 80 11 55 Flange Ceramic Pkg
Ceramic Flange Mount
MRF173CQ.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Excellent Thermal Stability; Suited for Class A Operation

Low Noise Figure— 1.5 dB (Typ.) at 2.0 A, 150 MHz

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Low Thermal Resistance

Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% Min. (60% Typ.)

MRF173CQ - Case 316-01 Style 2.JPG
TMOS
2001/09/17 MRF141 Buy RF Power MOSFET 150W, to 175MHz, 28V
5 175 150 18 40 Flange Ceramic Pkg
Ceramic Flange Mount
MRF141.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed performance at 30 MHz, 28V: Output Power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%

Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB

Low Thermal Resistance

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

MRF141- Case 211-11 Style 2.JPG
TMOS
2001/09/09 MRF136Y Buy The RF MOSFET Line 30W, to 400MHz, 28V
5 400 30 12 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF136Y.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode

100%Test for Load Mismatch at all Phase Angels with 30:1 VSWR

Small and Large Signal characterization

Guaranteed 28 Volt, 150 MHz Performance - Output Power = 30 Watts Broadband Gain = 14 dB (Typ.) Efficiency = 54% (Typ.)

Facilitates Manual Gain Control ALC and Modulation Techniques

Excellent Thermal Stability, Ideally Suited for Class A Operation

Space Saving Package for Push–:Pull Circuit Applications

MRF136Y - Case 319 B-02 Style 1.JPG
TMOS
2001/09/05 MRF174 Buy The RF MOSFET Line 125W, 200MHz
5 200 125 9 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF174.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc

Facilitates Manual Gain Control, ALC and Modulation Techniques

Excellent Thermal Stability; ideally Suite for Class A Operations

Guaranteed Performance at 150 MHz, 28 Vdc: Output power = 125 W, Minimum gain = 9.0 dB,Efficiency = 50% (min.)

Low Noise Figure — 3.0 dB (Typ.) at 2.0 A, 150 MHz

MRF174- Case 211-02 Style 2.JPG
TMOS
2001/09/06 MRF158 Buy The Broadband RF MOSFET Line 2W, 500MHz, 28V
5 500 2 16 55 Flange Ceramic Pkg
Ceramic Flange Mount
MRF158.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode

Guaranteed 28 volt, 500 MHz Performance: Output Power = 2.0 Watts, Minimum Gain = 16 dB (Min.), Efficiency = 55% (Typ.)

Facilitates Manual Gain Control, ALC and Modulation Techniques

100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR

Excellent Thermal Stability Ideally Suited for Class A Operation

MRF158 - Case 305-01 Style 2.JPG
TMOS
2001/08/29 MRF173 Buy The RF MOSFET Line 80W, 175MHz, 28V
5 175 80 11 55 Flange Ceramic Pkg
Ceramic Flange Mount
MRF173.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Low Thermal Resistance

Guaranteed Performance at 150 MHz, 28 V: Output power = 80 W, Gain = 11 dB (13 dB Typ.), Efficiency = 55% min. (60% Typ.)

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Excellent Thermal Stability, Suite for Class A Operation

Low Noise Figure — 1.5 dB (Typ.)p at 2.0 A, 150 MHz

MRF173- Case 211-11 Style 2.JPG
TMOS
2001/09/04 MRF175GV Buy The RF MOSFET Line 200/150W, 500MHz, 28V
5 225 200 14 65 Flange Ceramic Pkg
Ceramic Flange Mount
MRF175GU.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Low Crss — 20 pF typ @ VDS = 28 V

Low Thermal Resistance

100% Ruggedness Test at Rate Output Power

Guaranteed Performance: MRF175GV @ 28 V, 225 MHz (“V” Suffix),Output power — 200 W, Power Gain — 14 dB (Typ.), Efficiency — 65% (Typ.)typ

MRF175GU - MRF175GV Case 375-04 Style 2.JPG
TMOS
2001/08/31 MRF177 Buy The RF MOSFET Line 100W, 400MHz, 28V
5 400 100 12 60 Flange Ceramic Pkg
Ceramic Flange Mount
MRF177.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Excellent Thermal Stability; Suited for Class A Operation

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Low Crss — 10 pF typ. @ VDS = 28 V

Low Thermal Resistance

Typical Performance at 400 MHz, 28 V: Output power — 100 W, Gain — 12 dB, Efficiency — 60%

MRF177-CASE-744A-01-STYLE-2.JPG
TMOS
2001/08/21 MRF134 Buy The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V
5 400 5 11 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF134.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode

Guaranteed 28V, 150 MHz Performance Output Power = 5.0 watts Minimum Gain = 11 dB Efficiency = 55% (Typ.

Smal land Large Signal Characterization

Typical Performance at 400 MHz, 28V, 5.0W Output = 10.6 dB gain

100% Test for Load Mismatch at all Phase Angles with 30:1 VSWR

Low Noise Figure: 2.0 dB (Typ.) at 200 mA, 150 MHz

Excellent Thermal Stability, Ideally Suited for Class A Operation

100%Test for Load Mismatch at all Phase Angel with 30:1 VSWR

MRF134 - Case 211-07, Style 2.JPG
TMOS
2001/08/21 MRF166W Buy The RF MOSFET Line 40W, 500MHz, 28V
30 500 40 14 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF166W.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode MOSFET

Typical performance at 175 MHz, 28 Vdc: Output power = 40 W, Gain = 17 dB, Efficiency = 60%

Push–Pull Configuration Reduces Even Numbered Harmonics

Low Crss — 4.0 pF @ VDS = 28 V

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Facilitates Manual Gain Control, ALC and Modulation Techniques

Excellent Thermal Stability Ideally Suited for Class A Operation

Guaranteed performance at 500 MHz, 28 Vdc: Output power = 40 W, Gain = 14 dB, Efficiency = 50%

MRF166W-CASE-412-01-STYLE-1.JPG
TMOS
2001/08/15 MRF151 Buy RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
5 175 150 13 40 Flange Ceramic Pkg
Ceramic Flange Mount
MRF151.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance at 30 MHz, 50 V:, Output Power — 150 W, Gain — 18 dB (22 dB Typ), Efficiency — 40%

Typical Performance at 175 MHz, 50 V:, Output Power — 150 W, Gain — 13 dB, Low Thermal Resistance, Ruggedness Tested at Rated Output Power, Nitride Passivated Die for Enhanced Reliability

MRF151.pdf
TMOS
2001/08/21 MRF166C Buy 1 The RF MOSFET Line 20W, 500MHz, 28V
5 500 20 13.5 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF166C.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W, Gain = 13.5 dB, Efficiency = 50%

Replacement for Industry Standards such as MRF136, V2820, BLF244, SD1902, and ST1001

100% Tested for Load Mismatch at all Phase Angel with 30:1 VSWR

Low Crss — 4.0 pF @ VDS = 28 V

Facilitate Manual Gain Control, ALC and Modulation Techniques

MRF166C - Case 319-07 Style 3.JPG
TMOS
2001/08/09 MRF150 Buy RF Power MOSFET 150W, to 150MHz, 50V
5 150 150 17 45 Flange Ceramic Pkg
Ceramic Flange Mount
MRF150.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Superior High Order IMD - IMD(d3) (150W PEP): –32dB (Typ.), IMD(d11) (150W PEP): –60dB (Typ.)

Specified 50V, 30MHz Characteristics - Output Power = 150 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)

100% Test for Load Mismatch at all Phase Angels

MRF150- Case 211-11 Style 2.JPG
TMOS
2001/07/29 MRF275G Buy The RF MOSFET Line 150W, 500MHz, 28V
100 500 150 10 50 Flange Ceramic Pkg
Flange Mount
MRF275G.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1

Overall lower capacitance @ 28 V: Ciss — 135 pF, Crss — 17 pF, Coss — 140 pF

Typical Data for Power Amplifiers in Industrial and Commercial Applications:

Typical performance @ 225 MHz, 28 Vdc: OutputPpower — 200 W, Power Gain — 15 dB, Efficiency — 65%

Simplified AVC, ALC and Modulation

Typical Performance @ 400 MHz, 28 Vdc: Output Power — 150 W, Power Gain — 12.5 dB, Efficiency — 60%

Guaranteed Performance @ 500 MHz, 28 Vdc: Output power — 150 W, Power Gain — 10 dB, (min.), Efficiency — 50% (min.)

MRF275G Case 375-04 Style 2.JPG
TMOS
2001/08/12 MRF137 Buy The RF MOSFET Line 30W, to 400MHz, 28V
5 400 30 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
MRF137.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed 28 V, 150 MHz Performance - Output power = 30 W Minimum Gain = 13 dB Efficiency — 60% (Typ.)

100% Test for Load Mistmatch at all Phase Angels with 30:1 VSWR

Typical Performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain

Small and Large Signal Characterization

Excellent Thermal Stability, Ideally Suite for Class A Operation

Low Noise figure — 1.5 dB (typ.) at 1.0 A, 150 MHz

Facilitates Manual Gain Control, ALC and Modulation Techniques

MRF137 - Case 211-07, Style 2.JPG
TMOS
2001/07/14 MRF151G Buy 1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
5 175 300 14 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF151G.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Guaranteed Performance at 175 MHz, 50 V:

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Low Thermal Resistance — 0.35°C/W

Efficiency — 50%

Gain — 14 dB (16 dB Typ)

Output Power — 300 W

MRF151G.jpg
TMOS
2001/07/23 MRF160 Buy The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
30 500 4 16 55 Flange Ceramic Pkg
Ceramic Flange Mount
MRF160.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode MOSFET

Guaranteed 28 V, 500 MHz Performance: Output Power = 4.0 W,Gain = 16 dB (min.), Efficiency = 55% (Typ.)

100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR

Facilitates Manual Gain Control, aLS and Modulation Techniques

Excellent Thermal Stability, Ideally Suite for Class A Operation

Low Crss – 0.8 pF Typical at VDS = 28 V

MRF160 - Case 249-06 Style 3.JPG
TMOS
2001/07/14 MRF157 Buy Linear RF Power MOSFET 600W, to 80MHz
5 80 600 21 45 Flange Ceramic Pkg
Ceramic Flange Mount
MRF157.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Specified 50 volts, 30 MHz characteristics

Efficiency = 45% (typ.)

Power gain = 21 dB (typ.)

Output power = 600 watts

MRF157 - Case 368-03 Style 2.JPG
TMOS
2001/07/14 MRF154 Buy Broadband RF Power MOSFET 600W, to 80MHz, 50V
2 100 600 17 45 Flange Ceramic Pkg
Ceramic Flange Mount
MRF154.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel enhancement mode MOSFET

Specified 50 volts, 30 MHz Characteristics - Output power = 600 Watts, Power Gain = 17 dB (Typ.), Efficiency = 45% (Typ.)

MRF154 - Case 368-03 Style 2 HOG PAC.JPG
TMOS
2001/08/08 MRF171A Buy The RF MOSFET Line 45W, 150MHz, 28V
100 200 45 17 60 Flange Ceramic Pkg
Flange Mount
MRF171A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode MOSFET

Excellent Thermal Stability Suited for Cass A Operation

Guaranteed performance at 150 MHz, 28 Vdc: Output power = 45 W, Power gain = 17 dB (min)' Efficiency = 60% (min)

Typical Data for Power Amplifiers Applications in Industrial, Commercial and Amateur Radio Equipment:

Typical performance at 30 MHz, 28 Vdc: Output Power = 30 W, Power gain = 20 dB (Typ.) (PEP), Efficiency = 50% (typ.), IMD(d3) (30 W PEP) –32 dB (Typ.)

Gold Top Metal

Low Crss – 8 pF @ VDS = 28 V

100%Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Facilitates Manual Gain Controll, ALC and Modulation Techniques

MRF170A - Case 211-07, Style 2.JPG
TMOS
2001/07/14 MRF275L Buy The RF MOSFET Line 100W, 500MHz, 28V
5 500 100 8.8 55 Flange Ceramic Pkg
Ceramic Flange Mount
MRF275L.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Low Thermal Resistance

100% Ruggedness Tested at Rated Output Power

Guaranteed performance @ 500 MHz, 28 Vdc: Output Power — 100 W, Power gain — 8.8 dB (Typ.), Efficiency — 55% (Typ.)

Low Crss — 17 pF typ. @ VDS = 28 V

MRF275L-CASE-333-04-STYLE-2.JPG
TMOS
2001/06/09 DU28120T Buy RF Power MOSFET Transistor 120W, 2-175MHz, 28V
2 175 120 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU28120T.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

Lower noise figure than bipolar devices

High saturated output power

Lower capacitances for broadband operation

DMOS structure

RF T SI - DU28120T.JPG
DMOS
2001/01/28 MRF136 Buy The RF MOSFET Line 15W, to 400MHz, 28V
5 400 15 13 50 Flange Ceramic Pkg
Ceramic Flange Mount
MRF136.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N–Channel Enhancement Mode

Excellent Thermal Stability Suited for Cass A Operation

100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR

Small and Large Signal Characterization

Guaranteed 28 Volt, 150 MHz Performance - Output Power = 15 Watts Narrowband Gain = 16 dB (Typ.) Efficiency = 60% (Typ.)

Facilities Manaul Gain Control, ALC and Modulation Techniques

MRF136 - Case 211-07, Style 2.JPG
TMOS
2001/01/20 UF28100H Buy RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
100 500 100 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
UF28100H.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

RoHS Compliant

Lower Noise Figure than Competitive Devices

High Saturated Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

UF28100H.JPG
DMOS
2000/12/08 DU2880U Buy RF Power MOSFET Transistor 80W, 2-175MHz, 28V
2 175 80 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU2880U.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

RF PT- SI _ DU2860U.JPG
DMOS
2000/11/26 DU1215S Buy RF Power MOSFET Transistor 15W, 2-175MHz, 12V
2 175 15 9.5 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU1215S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

Specifically designed for 12 volt applications

Lower noise figure than bipolar devices

High saturated output power

Lower capacitances for broadband operation

DMOS structure

RF PT SI _DU1215S.JPG
DMOS
2000/09/04 DU2810S Buy RF Power MOSFET Transistor 10W, 2-175MHz, 28V
2 175 10 13 55 Flange Ceramic Pkg
Ceramic Flange Mount
DU2810S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Low Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS structure

RF PT- SI _DU2810S.JPG
DMOS
2000/09/04 DU2880T Buy 1 RF Power MOSFET Transistor 80W, 2-175MHz, 28V
2 175 80 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU2880T.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturated Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

RF PT- SI DU2880T.JPG
DMOS
2000/08/07 LF2805A Buy RF Power MOSFET Transistor 5W, 500-1000MHz, 28V
500 1000 5 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
LF2805A.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Low Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS structure

500 MHz to 1400 MHz

Broadband Linear Operation

DMOS
2000/08/07 UF2815B Buy 1 RF Power MOSFET Transistor 15W, 100-500 MHz, 28V
100 500 15 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
UF2815B.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Capacitances for Broadband Operations

DMOS Structure

100 MHz to 500 MHz Operation

RoHS Compliant

Low Noise Floor

Common Source Configuration

UF2815B.JPG
DMOS
2000/07/27 DU28120V Buy RF Power MOSFET Transistor 120W, 2-175MHz, 28V
2 175 120 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU28120V.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS structure

RF PT SI - DU28120V.JPG
DMOS
2000/07/26 UF2805B Buy 1 RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
100 500 5 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
UF2805B.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

100 MHz to 500 MHz Operation

Lower Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS Structure

UF2805B.JPG
DMOS
2000/07/26 UF2840P Buy RF Power MOSFET Transistor 40W, 100-500 MHz, 28V
100 500 40 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
UF2840P.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS Structure

UF2840P.JPG
DMOS
2000/07/23 DU2805S Buy RF Power MOSFET Transistor 5W, 2-175MHz, 28V
2 175 5 11 55 Flange Ceramic Pkg
Ceramic Flange Mount
DU2805S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

Lower noise figure than bipolar devices

High saturated output power

Lower capacitances for broadband operation

DMOS structure

RF PT- SI _ DU2805S.JPG
DMOS
2000/07/23 DU2820S Buy RF Power MOSFET Transistor 200W, 2-175MHz, 28V
2 175 20 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU2820S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS structure

RF PT- SI DU2820S.JPG
DMOS
2000/07/21 DU28200M Buy RF Power MOSFET Transistor 200W, 2-175MHz, 28V
2 175 200 13 55 Flange Ceramic Pkg
Ceramic Flange Mount
DU28200M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Figure than Bipolar Devices

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS structure

RF PT- SI _ DU28200M.JPG
DMOS
2000/07/21 UF2810P Buy RF Power MOSFET Transistor 10W, 100-500 MHz, 28V
100 500 10 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
UF2810P.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

100 MHz to 500 MHz operation

Lower noise floor

Common source configuration

Lower capacitances for broadband operation

DMOS structure

MACOM_general.png
DMOS
2000/07/20 UF2840G Buy RF Power MOSFET Transistor 5W, 100-500 MHz, 28V
100 500 40 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
UF2840G.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

100 MHz to 500 MHz Operation

Lower Noise Floor

Lower Capacitances for Broadband Operation

DMOS Structure

Common Source Configuration

UF2840G.JPG
DMOS
2000/07/20 UF28100M Buy RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
100 500 100 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
UF28100M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

RoHS Compliant

Lower Noise Figure than Competitive Devices

High Saturated Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

UF28100M.JPG
DMOS
2000/07/21 UF2820P Buy RF Power MOSFET Transistor 20W, 100-500 MHz, 28V
100 500 20 10 50 Flange Ceramic Pkg
Ceramic Flange Mount
UF2820P.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

Lower Noise Floor

Common Source Configuration

Lower Capacitances for Broadband Operation

DMOS Structure

UF2820P.JPG
DMOS
2000/07/20 UF28100V Buy RF Power MOSFET Transistor 100W, 100-500 MHz, 28V
100 500 100 10 50 Flange Ceramic Pkg
Flange Mount
UF28100V.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-channel Enhancement Mode Device

High Saturated Output Power

Lower Capacitances for Broadband Operation • High saturated output power • Lower noise figure than competitive devices

DMOS Structure

Lower Noise Figure than Competitive Devices

UF28100V.JPG
DMOS
2000/07/19 UF28150J Buy RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V
100 500 150 8 55 Flange Ceramic Pkg
Ceramic Flange Mount
UF28150J.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
DMOS Structure

Common Source Configuration

Lower Capacitance for Broadband Operation

UF28150J.JPG
DMOS
2000/07/18 DU2840S Buy RF Power MOSFET Transistor 40W, 2-175MHz, 28V
2 175 40 13 60 Flange Ceramic Pkg
CeramicFlange Mount
DU2840S.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel enhancement mode device

Lower noise figure than bipolar devices

High saturated output power

Lower capacitances for broadband operation

DMOS structure

MACOM_general.png
DMOS
2000/07/19 DU2860U Buy RF Power MOSFET Transistor 60W, 2-175MHz, 28V
2 175 60 13 60 Flange Ceramic Pkg
Ceramic Flange Mount
DU2860U.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
N-Channel Enhancement Mode Device

High Saturate Output Power

Lower Capacitances for Broadband Operation

DMOS Structure

Lower Noise Figure than Bipolar Devices

RF PT- SI _ DU2860U.JPG
DMOS
2000/10/22 PH3135-65M Buy Radar Pulsed Power Transistor 65W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
3100 3500 65 7.5 35 Flange Ceramic Pkg
Ceramic Flange Mount
PH3135-65M.pdf
Yes
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistor

Broadband Class C Operation

Common Base Configuration

PH3135-65M.jpg
Bipolar