RF Power Transistors - Silicon Bipolar

RF Power Transistors - Si

At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our all gold metallization fabrication processes ensures high performance and long term reliability. Our bipolar transistors are designed to provide our customers with solid solutions for their demanding applications.  

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releaseDate Part Number Ordering Short Description Min Frequency (MHz) Max Frequency (MHz) Pout (W) Gain (dB) Efficiency (%) Package Bias Voltage (V) Datasheet Application Notes Lead-Free Type Package Category Features Product Image
 
 
 
 
 
 
2007/10/15 MAPR-001090-350S00 Buy Avionics Pulsed Power Transistor 350W, 1025-1150 MHz, 10µs Pulse, 1% Duty
1025 1150 350 9 45 Flange Ceramic Pkg
50 MAPR-001090-350S00.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Gold Metallizsation System

Diffused emitter ballasting Resistor

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Confirguration

Hermetic Metal/cCeramic Package

Internal Input and Output Impedance Matching

RoHS Compliant

MAPR-001090-350S00_355E-01 Style 1 Ceramic.JPG
2007/08/15 MAPR-001011-850S00 Inquire Avionics Pulsed Power Transistor 850W, 1025-1150 MHz, 10µs Pulse, 1% Duty
1025 1150 850 7.8 42 Flange Ceramic Pkg
50 MAPR-001011-850S00.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Diffused Emitter ballasting resistors

High efficiency Inter-Digitized Geometry

Broadband Class C operation

Common Base Configuration

Hermetic Metal/ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

RoHS Compliant

MAPR-00xxxx.jpg
2007/02/01 MAPR-000912-500S00 Buy Avionics Pulsed Power Transistor 500W, 960-1215 MHz, 10µs Pulse, 10% Duty
960 1215 500 9 45 Flange Ceramic Pkg
50 MAPR-000912-500S00.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistor

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

RoHS compliant

MAPR-00xxxx.jpg
2006/12/10 MAPR-002729-170M00 Buy Radar Pulsed Power Transistor 170W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 170 8.5 40 Flange Ceramic Pkg
36 MAPR-002729-170M00.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

MAPR-002729-170M00.JPG
2006/12/09 MAPRST0912-50 Buy Avionics Pulsed Power Transistor 50W, 960-1215 MHz, 10µs Pulse, 10% Duty
960 1215 50 9.1 40 Flange Ceramic Pkg
50 MAPRST0912-50.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Gold Metallization System

Diffused Emitter Ballasting Resistor

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Out Impedance Matching

MAPRST0912-50.JPG
2006/09/30 MAPRST0912-350 Buy Avionics Pulsed Power Transistor 350W, 960-1215 MHz, 10µs Pulse, 10% Duty
960 1215 350 9.4 45 Flange Ceramic Pkg
50 MAPRST0912-350.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

MAPRST0912-350.JPG
2006/01/30 MAPRST1030-1KS Buy Avionics Pulsed Power Transistor 1000W, 1030 MHz, 10µs Pulse, 1% Duty
1030 1030 1000 8 45 Flange Ceramic Pkg
50 MAPRST1030-1KS.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Diffused Emitter Ballasting Resistor

High efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

RoHS Compliant

MAPRST1030-1KS.JPG
2004/12/27 MRF428 Buy The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
1 30 150 13 45 Flange Ceramic Pkg
50 MRF428.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 DB, Efficiency = 45%

Intermodulation distortion @ 150 W (PEP): IMD = -30 db (max.)

100% Tested Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW

MRF428-CASE-211-07-STYLE-1.JPG
2003/03/17 PH3134-55L Buy Radar Pulsed Power Transistor 55W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
3100 3400 55 7.5 35 Flange Ceramic Pkg
36 PH3134-55L.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH3134-55L.JPG
2002/06/09 PH3134-20L Inquire Radar Pulsed Power Transistor 20W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty
3100 3400 20 7.5 35 Flange Ceramic Pkg
36 PH3134-20L.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

Broadband Class C Operation

Common Base Configuration

PH3134-20L.JPG
2001/12/24 PH1214-300M Buy Radar Pulsed Power Transistor 300W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 300 8.75 50 Flange Ceramic Pkg
40 PH1214-300M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

PH1214-300M.JPG
2001/10/24 MRF1004MB Buy Bipolar Microwave Pulse Power Silicon NPN Transistor 4.0W (peak), 960–1215MHz
960 1215 4 10 40 Flange Ceramic Pkg
35 MRF1004MB.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @ 1090 MHz, 35 Vdc

Output Power = 4.0 W Peak

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Nitride Passivated

Industry Standard Package

100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

Minimum Gain = 10 dB

Internal Input Matching for Broadband Operation

MRF1004MB-CASE-332A-03-STYLE-1.JPG
2001/10/14 MRF321 Buy The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V
200 500 10 12 50 Flange Ceramic Pkg
28 MRF321.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance at 400 MHz, 28 Vdc: Output Power = 10 W, Power Gain = 12 dB min., Efficiency = 50% min.

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc

Computer–controlled wirebonding gives consistent input Impedance

Gold Metallization System for High Reliability

MRF-321-CASE-244-04-STYLE-1.JPG
2001/10/26 2N6439 Buy The RF Line NPN Silicon Power Transistor 60W, 225 to 400MHz, 28V
225 400 60 7.8 55 Flange Ceramic Pkg
28 2N6439.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance in 225 to 400 MHz broadband amplifier @ 28 Vdc: Output Power = 60 W over 225 to 400 MHz band, Minimum Gain = 7.8 dB @ 400 MHz

Gold Metallization System for High Reliability Application

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWRTesdtedc

Built–In Matching Network for Broadband Operation using Double Match Technique

2N6439 - Case 316 -.JPG
2001/09/20 MRF421 Buy The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V
2 30 100 10 40 Flange Ceramic Pkg
12.5 MRF421.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
Specified 12.5 V, 30 MHz characteristics: Output Power= 100 W (PEP), Minimum Gain = 10 dB, Efficiency = 40%

Intermodulation Distortion @ 100 W (PEP) — IMD = –30 dB (min.)

100% Tested for Load Mismatch at all Phase Angelswith 30:1 VSWR

MRF421-CASE-211-11-STYLE-1.JPG
2001/09/20 MRF429 Buy The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 50V
2 30 150 13 45 Flange Ceramic Pkg
50 MRF429.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Specified 50 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45%

Diffused emitter resistors for superior ruggedness

Intermodulation distortion @ 150 W (PEP): IMD = –32 dB (Max)

100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR @ 150 W CW

2001/09/20 PH1214-55EL Buy Radar Pulsed Power Transistor 55W, 1.2-1.4 GHz, 1ms Pulse, 10% Duty
1200 1400 55 6.6 50 Flange Ceramic Pkg
28 PH1214-55EL.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-55EL.JPG
2001/09/12 MRF422 Buy The RF Line NPN Silicon Power Transistor 150W(PEP), 30MHz, 28V
2 30 150 10 40 Flange Ceramic Pkg
28 MRF422.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
Specified 28 V, 30 MHz Characteristics: Output Power = 150 W (PEP), Efficiency = 40%, Minimum Gain = 10 dB

Intermodulation Distortion @ 150 W (PEP) —IMD = –30 dB (min.)

100% Test for Load Mismatch at all Phase Angelswith 30:1 VSWR

MRF422-CASE-211-11-STYLE-1.JPG
2001/09/18 MRF313 Buy The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V
400 400 1 15 45 Flange Ceramic Pkg
28 MRF313.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
AN4002 - Recommendations For Long-Term Transistor Storage
Yes
Bipolar
Ceramic Flange Mount
Specified 28 V, 400 MHz Characteristics: Output Power = 1.0 W, Power Gain = 15 dB min.,Efficiency = 45% (Typ.)

Emitter Ballast and Low Current Destiny for Improved MTBF

Common Emitter for Improved Stability

MRF313 - Case 305-01 Style 2.JPG
2001/09/23 MRF323 Buy The RF Line NPN Silicon Power Transistor 20W, 400MHz, 28V
200 500 20 10 50 Flange Ceramic Pkg
28 MRF323.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance at 400 MHz, 28 V: Output Power = 20 W., Power Gain = 10 dB min, Efficiency = 50% min.

Gold Metallization System for High Reliability

100% Tested for Load Mismatch at all phase Angels with 30:1 VSWR •

Computer Controlled Wirebonding Gives Consistent Input Impedance

MRF-323-CASE-244-04-STYLE-1.JPG
2001/09/08 MRF327 Buy NPN, Power Transistor 80W, 100 to 500MHz, 28V
100 500 80 7.3 50 Flange Ceramic Pkg
28 MRF327.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @ 400 MHz, 28 Vdc: Output Power = 80 W over 225 to 400 MHz Band, Minimum Gain = 7.3 dB @ 400 MHz

Characterized for 100 =8 500 MHz

Gold Metallization System for High Reliability applications

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Built–In Matching Network for Broadband Operation using Double Match Technique

MRF327-CASE-316-01-STYLE-1.JPG
2001/08/23 MRF455 Buy The RF Line NPN Silicon Power Transistor 60W, 30MHz, 12.5V
2 30 60 13 55 Flange Ceramic Pkg
12.5 MRF455.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
Specified 12.5 V, 30 MHz Characteristics:

Efficiency = 55%

Minimum Gain = 13 dB

Output Power = 60 W

MRF455 - Case 211-07 Style 1.JPG
2001/08/25 MRF316 Buy The RF Line NPN Silicon Power Transistor 80W, 3.0-200MHz, 28V
30 200 80 10 55 Flange Ceramic Pkg
28 MRF316.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
Guaranteed performance at 150 MHz, 28 Vdc: Output Power = 80 W, Minimum Gain = 10 dB

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Built–in Matching Network for Broadband Operation

Gold Metallization System for High Reliability Applications

MRF316 -Case 316.JPG
2001/08/27 MRF426 Buy 1 The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V
2 30 25 22 35 Flange Ceramic Pkg
28 MRF426.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Specified 28 V, 30 MHz Characteristics: Output Power= 25 W (PEP), , Minimum Gain = 22 dB, Efficiency = 35%

Intermodulation Distortion @ 25 W (PEP) —IMD = –30 dB (max)

Class A and AB Characterization

100% Tested for Load Mismatch at all Phase Angels with 30:1 VSWR

BLX 13 Equivalent

MRF426-CASE-211-11-STYLE-1.JPG
2001/08/23 MRF392 Buy NPN, Power Transistor 80W, 100 to 500MHz, 28V
100 400 125 10 55 Flange Ceramic Pkg
28 MRF392.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
Specified 28 V, 400 MHz characteristics: Output Power = 125 W, Typical Gain = 10 dB, Efficiency = 55% (Typ.)

Gold Metallization System for High Reliability

Push–Pull Configuration Reduces Even Numbered Harmonics

Built–Input Impedance Matching Networks for Broadband Operations

100% Tested for Load Mismatch

MRF392-CASE-744A-01-STYLE-2.JPG
2001/08/25 MRF10031 Buy Microwave Power Silicon NPN Transistor 30W (peak), 960–1215MHz, 36V
960 1215 30 9 40 Flange Ceramic Pkg
36 MRF10031.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance@ 960-1215MHz, 36Vdc

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Silicon Nitride Passivated

Hermetically sealed, industry standard package

100%Tesdted for Load Mismatch all Phase Angles with 10:1 VSWR

Minimum Gain: 9.0dB min., 9.5dB typ.

Output Power: 30W peak

Internal Input Matching for Broadband Operation

MRF10031-CASE-332A-03-STYLE-2.JPG
2001/08/27 MRF454 Buy The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12.5V
2 30 80 12 50 Flange Ceramic Pkg
12.5 MRF454.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Specified 12.5 V, 30 MHz characteristics:

Efficiency = 50%

Minimum gain = 12 dB

Output power = 80 W

MRF454-CASE-211-11-STYLE-1.JPG
2001/08/23 MRF10005 Buy Microwave Power Silicon Bipolar Transistor 5.0 W, 960–1215 MHz, 28V
960 1215 5 8.5 45 Flange Ceramic Pkg
28 MRF10005.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @1.215GHz, 28Vdc

Hermetically Sealed Industry Standard Package

100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR

RF Performance Curves for 28 Vdc and 36 Vdc Operation

Minimum Gain = 8.5dB, 10.3dB (Typ.)

Output Power: 5.0W CW

Internal Input Matching for Broadband Operation

Gold Metallized, Emitter Ballasted for Long Life and Rresistance to Metal Migration

Silicon Nitride Passivated

MRF10005-CASE-336E-02-STYLE-1.JPG
2001/08/27 MRF393 Buy NPN, Power Transistor 100W, 30 to 500MHz, 28V
30 500 100 9.5 55 Flange Ceramic Pkg
28 MRF393.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Specified 28 V, 500 MHz Characteristics: Output Power = 100 W, Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C), Efficiency = 55% (Typ.)

Gold Metallization System for High Reliability

Push–Pull Configuration Reduces Even Numbered Harmonics

Built–In Input Impedance Matching Networks for Broad Operatons

100% Test for Load Mismatch

MRF393-CASE-744A-01-STYLE-2.JPG
2001/08/23 MRF314 Buy The RF Line NPN Silicon Power Transistor 30W, 30-200MHz, 28V
30 200 30 10 50 Flange Ceramic Pkg
28 MRF314.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed performance at 150 MHz, 28 Vdc: Output power = 30 W, Minimum gain = 10 dB

Gold Metallization System for High Reliability Applications

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

MRF314 - Case 211-07 Style 1.JPG
2001/08/16 MRF317 Buy The RF Line NPN Silicon Power Transistor 100W, 30-200MHz, 28V
30 200 100 9 55 Flange Ceramic Pkg
28 MRF317.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance at 150 MHz, 28 Vdc: Output Power = 100 W, Minimum Gain = 9.0 dB

Gold Metallization System for High Reliability Applications

100% Test for Load at all Phase Angels with 30:1 VSWR

Built–in matching network for broadband operation

Guaranteed Performance in Broadband Test Fixture

Peak AM Amplifier Service

High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W

MRF317 -Case 316.JPG
2001/08/22 MRF10120 Buy Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
960 1215 120 8 50 Flange Ceramic Pkg
36 MRF10120.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @ 1.215 GHz, 36 Vdc

Silicon Nitride Passivated

Hermetically Sealer Industry Standard Package

100% Tested for Load Mismatch at all Phases Angles with 3:1 VSWR

Gain = 7.6 dB min., 8 .5 dB (typ.)

Output Power = 120 W Peak

Internal Input and Output Matching for Broadband Operation

Gold Metalized, Emitter Ballasted for Long Life and resistance to Metal Migration

MRF10120-CASE-355C-02-STYLE-1.JPG
2001/08/22 MRF587 Buy The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
100 500 0.17 11 12 Flange Ceramic Pkg
15 MRF587.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Low Noise Figure: NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA

Low Intermodulation Distortion: TB3 = –70 dB, DIN = 125 dB µV

High Power Gain: GU(max) = 16.5 dB (typ.) @ f = 500 MHz

All Gold Metal System

Ion Implanted

High fT — 5.5 GHz

Nichrome Emitter Ballast Resistors

2001/08/16 MRF141G Buy RF Power MOSFET 300W, 175MHz, 28V
5 175 300 12 50 Flange Ceramic Pkg
28 MRF141G.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
TMOS
Ceramic Flange Mount
Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%

Nitride Passivated Die for Enhanced Reliability

Ruggedness Tested at Rated Output Power

Low Thermal Resistance: 0.35°C/W

MRF141G - Case 375-04 Style 2.JPG
2001/08/16 MRF10150 Buy Microwave Pulse Power Silicon NPN Transistor 150W (peak), 1025–1150MHz
1025 1150 150 9.5 40 Flange Ceramic Pkg
50 MRF10150.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A

Recommended Driver for a Pair of MRF10500 Transistors

Characterized with 10 µs, 10% Duty Cycle Pulses

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Silicon Nitride Passivated

Hermetically Sealed Package

100% Tested for Load Mismatch at all Phase Angles with 10:1 VSWR

Gain = 9.5 dB min, 10.0 dB (typ.)

Output Power = 150 W Peak

Internal Input and Output Matching

MRF10150-CASE-376B-02-STYLE-1.JPG
2001/08/12 MRF448 Buy The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
2 30 250 12 45 Flange Ceramic Pkg
50 MRF448.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45%

100% Test for Load Mismatch at all Phase Angels with 3:1 VSWR

Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)

MRF448.png
2001/08/04 MRF10350 Buy Bipolar
1025 1150 350 8.5 40 Flange Ceramic Pkg
50 MRF10350.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
Guaranteed Performance @ 1090 MHz - Output Power = 350 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)

Silicon Nitride Passivated

Hermetically Sealed Package

100%Tested for Load Mismatch at all Phases Angels with 10:1 VSWR

Characterized Using Mode-S Pulse Format

Internal Input and Output Matching

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

MRF10350-CASE-355E-01-STYLE-1.JPG
2001/07/14 MRF1090MB Buy Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz
960 1215 90 8.4 35 Flange Ceramic Pkg
50 MRF1090MB.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 W Peak Minimum Gain = 8.4 dB

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Nitride Passivated

Industry Standard Package

100%Test for Load Mismatch at all Phase Angelswith 10:1 VSWR

Internal Input and Output Matching

MRF1090MB-CASE-332A-03-STYLE-1.JPG
2001/07/14 MRF10502 Buy Microwave Pulse Power Silicon NPN Transistor 500W (peak), 1025–1150MHz
1025 1150 500 8.5 40 Flange Ceramic Pkg
50 MRF10502.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @ 1090 MHz - Output Power = 500 W Peak Gain = 8.5 dB min, 9.0 dB (Typ.)

Internal Input and Output Matching

Gold Metalized, Emitter, Ballested for Long Life and Metal Migration

Silicon Nitride Passivated

Hermetically Sealed Industry Packaging

100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

Characterized with 10µs, 1% Duty Cycle Pulses

MRF10502-CASE-355J-02-STYLE-1.JPG
2001/07/14 MRF1150MB Buy Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz
960 1215 150 7.8 35 Flange Ceramic Pkg
50 MRF1150MB.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @ 1090 MHz, 50 Vdc - Output Power = 150 W Peak Minimum gain = 7.8 dB

Nitride Passivated

Industry Standard Package

100%Test for Load Mismatch at all Phase Angels with 10:1 VSWR

Internal Input Matching for Broadband Operation

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

MRF1150MB-CASE-332A-03-STYLE-1.JPG
2001/07/14 MRF1000MB Buy Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960–1215 MHz, 18V
960 1215 0.2 10 Flange Ceramic Pkg
18 MRF1000MB.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

Nitride Passivated

Industry Standard Package

100%Tested for Load Mismatch at all Phase Angles with 10:1 VSWR

Minimum Gain: 10dB

Output Power: 0.2W

Internal input matching for broadband operation

MRF1000MB-CASE-332A-03-STYLE-2.JPG
2001/05/05 PH1090-700B Buy Avionics Pulsed Power Transistor 700W, 1030-1090 MHz, 32µs Pulse, 2% Duty
1030 1090 700 7.5 50 Flange Ceramic Pkg
50 PH1090-700B.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Common Base Configuration

Broadband Class C Operation

PH1090-700B.jpg
2001/01/26 PH1090-15L Buy Avionics Pulsed Power Transistor 15W, 1030-1090 MHz, 250µs Pulse, 10% Duty
1030 1090 15 9 40 Flange Ceramic Pkg
45 PH1090-15L.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

PH1090-15L.JPG
2001/02/18 PH2729-65M Buy Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 65 8.5 40 Flange Ceramic Pkg
36 PH2729-65M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2729-65M.jpg
2000/12/14 PH1214-12M Buy Radar Pulsed Power Transistor 12W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 12 8.5 45 Flange Ceramic Pkg
28 PH1214-12M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-12M.JPG
2000/09/20 PH3134-10M Buy Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M
3100 3400 10 8 35 Flange Ceramic Pkg
36 PH3134-10M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
NPN Silicon Microwave Power Transistors

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

PH3134-10M.JPG
2000/09/25 PH1214-25M Buy Radar Pulsed Power Transistor 25W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 25 9.5 50 Flange Ceramic Pkg
28 PH1214-25M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-25M.JPG
2000/09/14 PH3135-25S Buy Radar Pulsed Power Transistor 25W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
3100 3500 25 7.5 35 Flange Ceramic Pkg
36 PH3135-25S.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH3135-25S.JPG
2000/09/08 PH2729-130M Buy Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 130 7.5 40 Flange Ceramic Pkg
36 PH2729-130M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

MAPR-00xxxx.jpg
2000/09/10 PH1214-110M Buy Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 110 7.4 50 Flange Ceramic Pkg
40 PH1214-110M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-110M.JPG
2000/09/03 PH1090-550S Buy Avionics Pulsed Power Transistor 550W, 1090 MHz, 10µs Pulse, 1% Duty
1030 1090 550 7.4 55 Flange Ceramic Pkg
50 PH1090-550S.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1090-550S.jpg
2000/09/01 PH1214-2M Buy Radar Pulsed Power Transistor 2W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty
1200 1400 2 7 40 Flange Ceramic Pkg
28 PH1214-2M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-2M.JPG
2000/08/16 PH1617-2 Buy Wireless Bipolar Power Transistor 2W, 16 -1.7 GHz
1600 1700 2 10 35 Flange Ceramic Pkg
25 PH1617-2.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Designed for Linear Amplifier Applications

Diffused Emitter Ballasting Resistor

Common Emitter Configuration

Class A: +44 dBm typ. 3rd Order Intercept Point

Class AB: -33 dBc typ. 3rd IMD at 2 W PEP

Internal Input Impedance Matching

PH1617-2.JPG
2000/08/16 PH1214-100EL Buy Radar Pulsed Power Transistor 100W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty
1200 1400 100 6 52 Flange Ceramic Pkg
28 PH1214-100EL.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Common Base Configuration

Broadband Class C Operation

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistors

Gold Metallization System

Internal Input and Output Impedance Matching

Hermetic Metal/Ceramic Package

RoHS Compliant

PH1214-100EL.JPG
2000/08/21 PH1214-80M Buy Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 80 7.9 50 Flange Ceramic Pkg
40 PH1214-80M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-80M.JPG
2000/08/17 PH3135-5M Buy Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
3100 3500 5 8.5 30 Flange Ceramic Pkg
33 PH3135-5M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistor

Common Base Configuration

Broadband Class C Operation

PH3135-5M.JPG
2000/08/07 PH1214-6M Buy Radar Pulsed Power Transistor 6W, 1.2-1.4 GHz, 100µs Pulse, 10% Duty
1200 1400 6 7 45 Flange Ceramic Pkg
28 PH1214-6M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-6M.JPG
2000/08/07 PH2226-50M Buy Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100µs Pulse, 10% Duty
2200 2600 50 8 40 Flange Ceramic Pkg
36 PH2226-50M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2226-50M.JPG
2000/08/06 PH3135-90S Buy Radar Pulsed Power Transistor 90W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty
3100 3500 90 7.5 35 Flange Ceramic Pkg
36 PH3135-90S.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistor

Broadband Class C Operation

Common Base Configuration

PH3135-90S.jpg
2000/07/30 PH1090-175L Buy Avionics Pulsed Power Transistor 175W, 1090 MHz, 250µs Pulse, 10% Duty
1030 1090 175 8.3 55 Flange Ceramic Pkg
45 PH1090-175L.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
NPN Silicon MicrowavePower Transistor

RoHS Compliant

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

PH1090-175L.JPG
2000/07/27 PH2226-110M Buy Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty M
2250 2550 110 7.4 40 Flange Ceramic Pkg
36 PH2226-110M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

PH2226-110M.jpg
2000/07/26 PH2729-110M Buy Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 110 6.8 35 Flange Ceramic Pkg
36 PH2729-110M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold metallization system

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2729-110M.jpg
2000/07/26 PH2729-25M Buy Radar Pulsed Power Transistor 25W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
2700 2900 25 9.2 45 Flange Ceramic Pkg
36 PH2729-25M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Gold Metallization System

Internal Input and Output Impedance Matching

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Hermetic Metal/Ceramic Package

PH2729-25M.JPG
2000/07/26 PH2731-5M Buy Radar Pulsed Power Transistor 5W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
2700 3100 5 7 30 Flange Ceramic Pkg
36 PH2731-5M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
NPN Silicon Microwave Power Transistors

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Internal Input and Output Impedance Matching

RoHS Compliant

Hermetic Metal/Ceramic Package

PH2731-5M.JPG
2000/07/23 PH2731-20M Buy Radar Pulsed Power Transistor 20W, 2.7-3.1 GHz, 100µs Pulse, 10% Duty
2700 3100 20 8.2 45 Flange Ceramic Pkg
36 PH2731-20M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2731-20M.JPG
2000/07/21 PH3135-20M Buy Radar Pulsed Power Transistor 20W, 3.1-3.5 GHz, 100µs Pulse, 10% Duty
3100 3500 20 7.5 35 Flange Ceramic Pkg
36 PH3135-20M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

High Efficiency Inter-Digitized Geometry

Diffused Emitter Ballasting Resistors

Broadband Class C Operation

Common Base Configuration

PH3135-20M.JPG
2000/07/21 PH2731-75L Buy Radar Pulsed Power Transistor 75W, 2.7-3.1 GHz, 300µs Pulse, 10% Duty
2700 3100 75 7.45 38 Flange Ceramic Pkg
36 PH2731-75L.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH2731-75L.JPG
2000/07/20 PH1090-75L Buy Avionics Pulsed Power Transistor 75W, 1030-1090 MHz, 250µs Pulse, 10% Duty
1030 1090 75 9 45 Flange Ceramic Pkg
45 PH1090-75L.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1090-75L.JPG
2000/07/21 PH1214-220M Buy Radar Pulsed Power Transistor 220W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 220 7.4 50 Flange Ceramic Pkg
40 PH1214-220M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

Gold Metallization System

InternalInput and Output Impedance Matching

PH1214-220M.jpg
2000/07/21 PH1090-350L Buy Avionics Pulsed Power Transistor 350W, 1090 MHz, 250µs Pulse, 10% Duty
1090 1090 350 8 55 Flange Ceramic Pkg
45 PH1090-350L.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

Common Base Configuration

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistor

High Efficiency Inter-Digitized Geometry

Broadband Class C operation

PH1090-350L.jpg
2000/07/19 PH1214-40M Buy Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty
1200 1400 40 8.5 50 Flange Ceramic Pkg
40 PH1214-40M.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
NPN Silicon Microwave Power Transistors

RoHS Compliant

Hermetic Metal/Ceramic Package

Internal Input and Output Impedance Matching

Gold Metallization System

Diffused Emitter Ballasting Resistors

High Efficiency Inter-Digitized Geometry

Broadband Class C Operation

Common Base Configuration

PH1214-40M.JPG
2018/06/05 MRF448A Buy The RF Line NPN Silicon Power Transistor 250W, 30MHz, 50V
1 30 250 12 45 Flange Ceramic Pkg
50 MRF448A.pdf
AN3009 - S-Parameter S2P File Format Guide
AN211a - Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
AN215a - RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
AN3025 - Transistor Mounting and Soldering
AN4002 - Recommendations For Long-Term Transistor Storage
AN721 - Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
Yes
Bipolar
Ceramic Flange Mount
Specified 50 V, 30 MHz Characteristics:Output Power = 250 W, Minimum Gain = 12 dB, Efficiency = 45%

100% tested for Load Mismatch at all Phase Angels with 3:1 VSWR

Intermodulation Distortion @ 250 W (PEP): IMD = –30 dB (max)

MRF448.png