ENGPA00312A
2 – 18 GHz 3-stage wideband feedback power amplifier
The ENGPA00312A is a GaN-on-SiC HEMT three-stage 4.0 – 5.0 W output, 32 – 48% power-added efficiency (p.a.e.) amplifier, that operates across 2 to 18 GHz. The design is 50-ohm matched and does not require off-chip bias chokes. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity epoxy attachment.
Product Specifications
- Part Number
- ENGPA00312A
- Description
- 2 – 18 GHz 3-stage wideband feedback power amplifier
- Min Frequency(MHz)
- 2000
- Max Frequency(MHz)
- 18000
- Gain(dB)
- 23.0
- Output P1dB(dBm)
- 36.00
- Bias Current(mA)
- 540
- Package Category
- 5.2 x 1.7 x 0.075 mm
- PAE(%)
- 37.00
Features
- Operation across 2.0 – 18.0 GHz
- 22 – 24 dB large-signal gain
- 4.0 – 5.0 W output; 32 – 48 % p.a.e.
- Good I/O Return Loss 2.0-18.0 GHz • >10 dB typical (50 ohms)
- Size • 5.2 x 1.7 x 0.075 mm • 0.205x 0.067 x 0.003 inch