NPT1004D
GaN Amplifier 28 V, 45 W, DC - 4 GHz
This part has been discontinued. The suggested replacement part is: CGHV27060MP or CGHV35060MP
The NPT1004 GaN HEMT is a power transistor optimized for DC - 4 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W. This transistor is assembled in an industry standard surface mount plastic package.
Discontinued: Not recommended for new designs.
Product Specifications
- Part Number
- NPT1004D
- Description
- GaN Amplifier 28 V, 45 W, DC - 4 GHz
- Min Frequency(MHz)
- 0
- Max Frequency(MHz)
- 4000
- Supply Voltage(V)
- 28
- PSAT Watt(W)
- 45.0
- Gain(dB)
- 13.0
- Efficiency
- 55
- Test Freq(GHz)
- 2.50
- Package
- SOIC8NE
- PSAT(dBm)
- 47
- Package Category
- Plastic
Features
- Optimized for Pulsed, WiMAX, W-CDMA, LTE, & other light thermal load applications from DC - 4 GHz
- 45 W P3dB CW Power
- 13.5 dB Small Signal Gain
- 55% Efficiency @ P3dB
- Thermally-Enhanced Surface Mount SOIC Package
- High Reliability Gold Metallization Process
- Subject to EAR99 Export Control
Applications
- land mobile radio
- Avionics
- Defense Communications
- Wireless Infrastructure
- ISM
- VHF/UHF/L/S-Band Radar
Technical Resources
Datasheet
Application Notes
- S-Parameter S2P File Format Guide
- Tape and Reel Packaging for Surface Mount Components
- Field Effect Transistors in Theory and Practice (supplied with the permission of Motorola)
- RF Small Signal Design Using Two-Port Parameters (supplied with the permission of Motorola)
- Recommendations For Long-Term Transistor Storage
- Impedance Matching Networks Applied to RF Power Transistors (supplied with the permission of Motorola)
- Surfacing Mounting Instructions - Footprint Guidelines
- Moisture Effects on the Soldering of Plastic Encapsulated Devices