10 W, Wideband GaN Distributed Amplifier, DIE, 2 to 18 GHz

The ENGDA00139A is a wideband GaN MMIC distributed amplifier (DA) die which operates from 2 to 18 GHz. The design is 50 ohm matched and does not require any off-chip choke. The DA delivers a nominal gain of 10 dB with positive slope of about 1 dB. The DA delivers a nominal output power of 10 W and a peak PAE of near 30%. The amplifier has gold backside metallization and is designed for gold-tin eutectic or high thermal conductivity epoxy attachment.