PIN Diode Limiter, 2 - 8 GHz
The LM202802‐Q‐x‐301 Surface Mount Silicon PIN Diode Limiters are manufactured using a proven hybrid manufacturing process incorporating PIN diodes and passive devices integrated within a ceramic substrate. These low profile, compact, surface mount components, offer small and large signal performance superior to that of comparable MMIC devices in QFN packages. The limiter modules are designed to optimize small signal insertion loss, noise figure and large signal flat leakage performance in a compact, surface mount package. Using PIN diodes with low thermal resistance (<20ºC/W), and a de‐coupled Schottky detector network as a current source, RF CW incident power levels of 50 dBm and RF peak incident power levels of 60 dBm @ 25 μs RF pulse width, 5% duty cycle are very achievable. In addition, this design concept provides low flat leakage power (<21 dBm) and low spike leakage energy (<0.5 Ergs) for superior LNA protection. The LM202802‐Q‐x‐301 limiter can be configured without an internal DC block on the output to obtain reduced flat leakage power (<10 dBm) with an external ZBD Schottky diode. This limiter part number is LM202802‐Q‐B‐301. The Schottky diode part number in surface mount, 3 terminal plastic package is MZB601‐2012. These LM202802‐Q‐x-301 limiters are ideal for wide band radar applications, from 2 - 8 GHz, requiring high volume, surface mount, solder re‐flow manufacturing. These products are durable, reliable, and capable of meeting all military, commercial, and industrial environments.