MACOM’s, MA4AGSW1A is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST), absorptive PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented hetero-junction technology. AlGaAs technology produces
a switch with less loss than a device fabricated using
conventional GaAs processes. As much as a 0.3dB
reduction in insertion loss can be realized at 50GHz. This
device is fabricated on an OMCVD epitaxial wafer using
a process designed for high device uniformity and
extremely low parasitics. The PIN diodes within the chip
exhibit low series resistance, low capacitance, and fast
switching speed. They are fully passivated with silicon
nitride and have an additional polymer layer for scratch
protection. The protective coating prevents damage
during handling and assembly to the diode junction as
well as the anode air-bridges. Off chip bias circuitry will
be required.