MA4AGSW1A
AlGaAs Absorptive
MACOM’s, MA4AGSW1A is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST), absorptive PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using MACOM’s patented hetero-junction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3dB reduction in insertion loss can be realized at 50GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The PIN diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction as well as the anode air-bridges. Off chip bias circuitry will be required.
Product Specifications
- Part Number
- MA4AGSW1A
- Short Description
- SPST Non-Reflective AlGaAs PIN Diode Switch
- Min Frequency(MHz)
- 50
- Max Frequency(MHz)
- 50000
- Insertion Loss (dB)
- 1.200
- Isolation(dB)
- 48
- IIP3(dBm)
- 40
- CW Incident Power(W)
- 0.2
- Compatible Parts
- MADR-007097
- Package Category
- Die
- Package
- DIE
- ROHS
- Yes
Features
- Ultra Broad Bandwidth : 50 MHz to 50 GHz
- 0.5 dB Insertion Loss at 50GHz
- Functional Bandwidth : 50 MHz to 70 GHz
- Low Current Consumption, -5V for low loss state
- 46 dB Isolation at 50 GHz
- Silicon Nitride Passivation
- Low Current Consumption, +10mA for Isolation State
- RoHS Compliant*
- Polymer Scratch Protection
- 260°C Reflow Compatible
Applications
- Aerospace and Defense
- ISM
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
Technology Partners
