Product Detail

Low Barrier Series Tee Si
The MA4E2513L-1289 SURMOUNTTM Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC™) process. HMIC™ circuits consist of Silicon pedestals which form diodes or via conductors embedded in glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC™ devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The Surmount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The extremely small “0301” outline allows for Surface Mount placement and multi-functional polarity orientations. The MA4E2513L-1289 SURMOUNT™ Diode is recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors, and limiters. The HMIC™ construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding surmount diode, which can be connected to a hard or soft substrate circuit with solder.
  • Extremely Low Parasitic Capitance and Inductance • • • •
  • Lower Susceptibility to ESD Damage
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300°C, 16 hours)
  • Rugged HMIC™ Construction with Polyimide Scratch Protection
  • Extremely Small “0301” (1000 x 300 um) Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required
  • ISM
  • Min Frequency: 0 MHz
  • Max Frequency: 26,000 MHz
  • Dynamic Resistance: 10 ohms
  • Total Capacitance: 0.12 pF
  • Vf: 0.3 V
  • Vb: 3 
  • Junction Capacitance: 0.12 pF
  • Test Frequency: 10 GHz
  • Tss: -53 dBm
  • RS: 12.8 Typ
  • ODS-1289
Package Category
  • Surface Mount Die
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Schottky Surmount , Tee, Low Bar Chip
ODS-1289 Inquire Buy
Die, SchottkySurmountTee, LowBarrier
ODS-1289 Inquire Buy

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