MA4SW110

HMIC™ PIN Diode

The MA4SW110, MA4SW210 and MA4SW310 are series-shunt, broadband, PIN diode switches made with MACOM’s HMIC™ (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. By also incorporating small spacing between circuit elements, the result is an HMIC™ chip with low insertion loss and high isolation at frequencies up to 26.5GHz. They are designed for use as moderate power, high performance switches and provide superior performance when compared to similar designs that use discrete components. The top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20, gold/tin solder or conductive silver epoxy.

Product Specifications

Part Number
MA4SW110
Short Description
HMIC™ PIN Diode
Min Frequency(MHz)
50
Max Frequency(MHz)
26500
Insertion Loss (dB)
0.600
Isolation(dB)
48
IIP3(dBm)
40
CW Incident Power(W)
2.0
Compatible Parts
MADR-011020
Compatible Parts
MADR-011020
Package Category
Die/Bumped Die
Package
DIE
ROHS
Yes

Features

  • Broad Bandwidth
  • Specified from 50 MHz to 20 GHz
  • Up to +30dBm C.W. Power Handling @ +25°C
  • Glass Encapsulated Chip with Polymer Protective Coating
  • Rugged Design Fully Monolithic
  • Lower Insertion Loss and Higher Isolation than Comparable pHEMT/Discrete Component Designs
  • Usable from 50 MHz to 26.5 GHz
  • 50 nS Switching Speed

Applications

  • Aerospace and Defense
  • ISM

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MA4SW110
Diode,Pin,IC,HMIC
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