The MADP-000208-13180W is a pair of silicon glass PIN diodes incorporated onto one chip and is fabricated using MACOM's patented HMICTM process. The device features three silicon pedestals embedded in low loss, low dispersion glass (k=4.1, Tand=0.002). The diodes are formed on the top of pedestals and connections to the backside of the device are made via electrically conductive sidewalls. Selective backside metallization is applied to produce a surface mount device. This vertical topology provides for exceptional heat transfer and also allows the topside to be fully encapsulated with silicon nitride. An additional polymer layer is also added to provide scratch and impact protection. These protective coatings prevent damage to the junction and the anode airbridge during handling and assembly.
The MADP-000208-13180W packageless devices are suitable for usage in high incident power, 44.8 dBm C.W at 2 GHz., series, shunt, or series-shunt switches. The low parasitic inductance, < 0.12 nH, and excellent RC constant, make these devices an attractive alternative for high frequency switch elements when compared to their plastic device counterparts.