Product Detail

SURMOUNT™ Low Barrier Silicon Schottky Diode

The MADS-002501-0002G0 SURMOUNT™ Schottky diode is a silicon low barrier device fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

  • Extremely Low Parasitic Capacitance & Inductance.
  • Dual Cut Die Footprint
  • Surface Mountable in Microwave Circuits. No Wire bonds Required
  • Rugged HMIC Construction with Polyimide Scratch Protection
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)
  • RoHS* Compliant
  • Aerospace and Defense
  • ISM
  • Vf: 0.3 V
  • Vb: 5 
  • Total Capacitance: 0.1 pF
  • Dynamic Resistance: 10 ohms
  • Junction Capacitance: 0.1 pF
  • Surmount Die
  • Yes
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
SURMOUNT™ Low Barrier Silicon Schottky Diode
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