MADS-002501-0002G0

SURMOUNT™ Low Barrier Silicon Schottky Diode

The MADS-002501-0002G0 SURMOUNT™ Schottky diode is a silicon low barrier device fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

Product Specifications

Part Number
MADS-002501-0002G0
Short Description
SURMOUNT™ Low Barrier Silicon Schottky Diode
Vf(V)
0.3000
Vb
5.00
Total Capacitance(pF)
0.100
Dynamic Resistance(ohms)
10.0
Junction Capacitance(pF)
0.100
Package
Surmount Die
ROHS
Yes

Features

  • Extremely Low Parasitic Capacitance & Inductance.
  • Dual Cut Die Footprint
  • Surface Mountable in Microwave Circuits. No Wire bonds Required
  • Rugged HMIC Construction with Polyimide Scratch Protection
  • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours)
  • RoHS* Compliant

Applications

  • Aerospace and Defense
  • ISM

Technical Resources

Datasheet


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MADS-002501-0002G0
SURMOUNT™ Low Barrier Silicon Schottky Diode