The MADS-002545-1307 Series Surmount
Silicon Schottky Cross-Over Quad Diodes are fabricated
with the patented Heterolithic Microwave Integrated
Circuit (HMIC™) process. HMIC™ circuits consist of
Silicon pedestals which form diodes or via conductors embedded
in a glass dielectric, which acts as the low dispersion,
low loss, microstrip transmission medium. The combination
of silicon and glass allows HMIC™ devices to have
excellent loss and power dissipation characteristics in a low
profile, reliable device.
These Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior mechanical performance
of a chip. The Surmount structure employs very low
resistance silicon vias to connect the Schottky contacts to the
metalized mounting pads on the bottom surface of the
chip. These devices are reliable, repeatable, and a
lower cost performance solution to conventional devices.
They have lower susceptibility to electrostatic
discharge than conventional beam lead Schottky diodes.
The multi-layer metallization employed in the fabrication of the
Surmount Schottky junctions includes a platinum diffusion
barrier, which permits all devices to be subjected to a 16-
hour non-operating stabilization bake at 300°C.
The “ 0202 ” outline allows for Surface Mount placement and
multi- functional polarity orientations. The MADS-002545-1307
Series is recommended for use in microwave circuits through
Ku band frequencies for lower power applications such as mixers,
sub-harmonic mixers, detectors and limiters. The HMIC
construction facilitates the direct replacement of more fragile
beam lead diodes with the corresponding Surmount diode,
which can be connected to a hard or soft substrate circuit with