MAGX-100027-002S0P

GaN Transistor 50 V, 2 W DC - 2.7 GHz

The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels to 2 W (33 dBm) in a plastic package.

The MAGX-100027-002S0P is ideally suited for military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.

Product Specifications

Part Number
MAGX-100027-002S0P
Description
GaN Transistor 50 V, 2 W DC - 2.7 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
2700
Gain(dB)
18.7
PSAT(W)
2
Package
6 x 3 mm DFN

Features

  • Suitable for Linear and Saturated Applications
  • CW and Pulsed Operation: 2 W Output Power
  • 260°C Reflow Compatible
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Technical Resources

Datasheet


Order from MACOM

MAGX-100027-002S0P
Transistor,GaN,2W,.01 to 2.7GHz
MAGX-100027-002S0P Distributors