Product Detail

GaN Transistor 50 V, 2 W DC - 2.7 GHz

The MAGX-100027-002S0P is a GaN on Si HEMT D-mode transistor suitable for DC - 2.7 GHz frequency operation. The device supports both CW and pulsed operation with peak output power levels to 2 W (33 dBm) in a plastic package.

The MAGX-100027-002S0P is ideally suited for military radio communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR.

  • Suitable for Linear and Saturated Applications
  • CW and Pulsed Operation: 2 W Output Power
  • 260°C Reflow Compatible
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant
  • Avionics
  • Military Radio
  • Radar
  • RF Energy
  • Digital cellular infrastructure
  • Test Instrumentation
  • Min Frequency: 0 MHz
  • Max Frequency: 2,700 MHz
  • Supply Voltage: 50 V
  • PSAT: 2 W
  • Gain: 18.7 dB
  • 6 x 3 mm DFN
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Transistor, GaN, 2W, .01 to 2.7GHz
3X6MM PDFN-14LD Inquire
Transistor, GaN, 2W, .01 to 2.7GHz
3X6MM PDFN-14LD Inquire
Amplifier SMB, MAGX-1A0027-002S0P
3X6MM PDFN-14LD Inquire

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