MAPC-A2004-B
GaN Amplifier 50 V, 90 W
The MAPC-A2004-B is a high power GaN on Silicon Carbide HEMT D-mode amplifier designed for 5G base station applications and optimized for 3.3 - 3.8 GHz modulated signal operation. This device supports pulsed and linear operation with peak output power levels to 90 W (49.5 dBm) in an7.0 x 6.5 mm DFN package.
Product Specifications
- Part Number
- MAPC-A2004-B
- Description
- GaN Amplifier 50 V, 90 W
- Min Frequency(MHz)
- 3300
- Max Frequency(MHz)
- 3800
- Supply Voltage(V)
- 50
- PSAT Watt(W)
- 90.0
- Package
- 7.0 x 6.5 mm DFN
Features
- Optimized for Cellular Base Station Applications
- Designed for Digital Predistortion Error Correction Systems
- High Terminal Impedances for Broadband Performance
- 50 V Operation
- 100% RF Tested
- RoHS* Compliant
Compatible Parts
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