MAPC-A2503

GaN Amplifier 50 V, 60 W AVG

The MAPC-A2503 is a high power GaN on Silicon Carbide HEMT D-mode amplifier suitable for asymmetrical Doherty base station applications with 60W average power and optimized for 3.7 - 4.0 GHz modulated signal operation. The device supports pulsed, and linear operation with peak output power levels to 450W (56.5 dBm) in an air cavity ceramic package.

Product Specifications

Part Number
MAPC-A2503
Description
GaN Amplifier 50 V, 60 W AVG
Min Frequency(MHz)
3700
Max Frequency(MHz)
4000
Supply Voltage(V)
50
PSAT Watt(W)
60.0
Gain(dB)
-2.0

Features

  • MACOM PURE CARBIDEĀ® Amplifier Series
  • Optimized for Cellular Base Station Applications
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Asymmetrical Doherty Application
  • High Terminal Impedances for Broadband Performance
  • 50 V Operation
  • 100% RF Tested
  • RoHS* Compliant

Applications

  • Aerospace and Defense
  • Defense Communications
  • ISM
  • VHF/UHF/L-Band Radar
  • Wireless Infrastructure

Technical Resources

Datasheet


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