MASW-011052
HMIC PIN Diode, SP2T Switch
The MASW-011052 device is a SP2T broad band switch with integrated bias networks utilizing MACOM’s patented HMIC (Heterolithic Microwave Integrated Circuit) process. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while gold backside metallization allows for manual or automatic chip bonding via 80/20 - Au/Sn, 62/36/2 - Sn/Pb/Ag solders or electrically conductive silver epoxy.
Product Specifications
- Part Number
- MASW-011052
- Description
- HMIC PIN Diode, SP2T Switch
- Min Frequency(MHz)
- 2000
- Max Frequency(MHz)
- 26000
- Isolation(dB)
- 59
- Insertion Loss (dB)
- 0.800
- IIP3(dBm)
- 43
- CW Incident Power(W)
- 2.0
- Package Category
- Die/Bumped Die
- Package
- DIE
- ROHS
- Yes
Features
- Broad Bandwidth Specified up to 18 GHz
- Fully Monolithic
- Low Insertion Loss / High Isolation
- Integrated Bias Network
- Usable up to 26 GHz
- RoHS Compliant* and 260°C Reflow Compatible
- Glass Encapsulate Construction
Technical Resources
Datasheet
Model Data (Sparameters)
Application Notes
- S-Parameter S2P File Format Guide
- Known Good Die Delivery Specification
- Tape and Reel Packaging for Surface Mount Components
- Bonding, Handling, and Mounting Procedures for Millimeterwave PHEMT MMICs
- ESD/EOS Protection for GaAs MMIC Switches
- Using the DR65-0109 (DR65-0003 replacement part) to Drive SPDT PIN Switches
- Techniques to Achieve High Isolation with GaAs MMIC Switch Chips
- Drivers for GaAs FET Switches and Digital Attenuators
- Comparison of Gallium Arsenide and Silicon PIN Diodes for High Speed Microwave Switches
- List of recommended Drivers for MACOM Switches.pdf