Product Detail

Silicon Schottky P-Type Diodes: Low Barrier
MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.
  • Superior 1/f noise.
  • Passivated with silicon nitride.
  • Low barrier height.
  • Better temperature stability than zero bias Schottky diode.
  • Vf: 0.28 V
  • Total Capacitance: 0.06 pF
  • Dynamic Resistance: 65 ohms
  • 0402P
Package Category
  • Beamlead
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Diode, Schottky, Beamlead, B10D
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