MSS25-141-B10D

Silicon Schottky P-Type Diodes: Low Barrier

MACOM’s Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general they require a small forward bias (5 ~ 50 µA) for small power levels below -20 dBm when used as microwave detectors.

Product Specifications

Part Number
MSS25-141-B10D
Short Description
Silicon Schottky P-Type Diodes: Low Barrier
Vf(V)
0.2800
Vb
3.00
Total Capacitance(pF)
0.060
Dynamic Resistance(ohms)
65.0
Package Category
Beamlead
Package
0402P

Features

  • Superior 1/f noise.
  • Passivated with silicon nitride.
  • Low barrier height.
  • Better temperature stability than zero bias Schottky diode.

Technical Resources

Datasheet


Order from MACOM

MSS25-141-B10D
Diode, Schottky, Beamlead, B10D