The MSW2000-200, MSW2001-200, and MSW2002-200 series of surface mount silicon PIN diode SP2T switches handle high power signals from 50 MHz to 1 GHz, 400 MHz to 4 GHz and 2 to 6 GHz respectively, in transmit-receive (TR), active receiver protection and other applications. This series is manufactured using proven hybrid manufacturing process incorporating high voltage PIN diodes and passive devices integrated within a ceramic substrate. These low profile, compact, surface mount components, (8 mm L x 5 mm W x 2.5 mm H) offer superior small and large signal performance superior to that of MMIC devices in QFN packages. The SP2T switches are designed in an asymmetrical topology to minimize Tx-Ant loss and maximize Tx-Rx isolation performance. The very low thermal resistance (< 10ºC/W ) of the PIN diodes in these devices enables them to reliably handle RF incident power levels of 50 dBm CW and RF peak incident power levels of 53 dBm in cold switching applications at TA = 85ºC. The low PIN diode series resistance (< 0.8 O), coupled with their long minority carrier lifetime,(> 2 µs), provides input third order intercept point (IIP3) greater than 65 dBm. These MSW2000-200, MSW2001-200, and MSW2002-200 series SP2T switches are designed to be used in high average and peak power switch applications, operating from 50 MHz to 6 GHz in three bands, which utilize high volume, surface mount, solder re-flow manufacturing. These products are durable and capable of reliably operating in military, commercial, and industrial environments The devices are RoHS compliant.