Product Detail

SP2T PIN Diode Switches
The MSW2010-201, MSW2011-201, series of surface mount silicon PIN diode SP2T switches handle high power signals from 50 MHz to 1 GHz, 400 MHz to 4 GHz respectively, in proven hybrid manufacturing process incorporating high voltage PIN diodes and passive devices integrated within a ceramic substrate. These low profile, compact, surface mount components, (8 mm L x 5 mm W x 2.5 mm H) offer superior small and large signal performance superior to that of MMIC devices in QFN packages. The SP2T switches are designed in an asymmetrical topology to minimize Tx-Ant loss and maximize Tx-Rx isolation performance. The very low thermal resistance (< 10ºC/W ) of the PIN diodes in these devices enables them to reliably handle RF incident power levels of 50 dBm CW and RF peak incident power levels of 53 dBm in cold switching applications at TA = 85ºC. The thick I layers of the PIN diodes, coupled with their long minority carrier lifetime, provides input third order intercept point (IIP3) greater than 60 dBm.
  • Wide Frequency Range: 50 MHz to 4 GHz, in 2 bands
  • Low Insertion Loss: 0.25 dB
  • High Voltage Rating for High RF Peak Power: 500 W
  • Higher Average Power Handling than • Plastic Packaged MMIC Switches: 100 W CW
  • SP2T PIN Diode Switches in Compact Outline: 8 mm L x 5 mm W x 2.5 mm H
  • Operates From Positive Voltage Only (5 V, 28 V to 125 V)
  • High IIP3: 65 dBm
  • RoHS Compliant
  • ISM
  • Min Frequency: 50 MHz
  • Max Frequency: 1,000 MHz
  • Insertion Loss : 0.2 dB
  • Isolation: 57 dB
  • IIP3: 65 dBm
  • CW Incident Power: 100 W
  • 8 mm L x 5 mm W x 2.5 mm H
Package Category
  • Plastic Surface Mount
  • Yes
Contact Info
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
Asymmetrical T-R Switch TX Left

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