The MSW2022-202 surface mount silicon PIN diode SP2T switch handles high power signals from 50 MHz to 1 GHz in transmit-receive (TR), active receiver protection and other applications. This switch module is manufactured using proven hybrid manufacturing process incorporating high voltage PIN diodes and passive devices integrated within a ceramic substrate. These low profile, compact, surface mount components, (8 mm L x 5 mm W x 2.5 mm H) offer small and large signal performance superior to that of MMIC devices in QFN packages. The SP2T switches are designed in an asymmetrical topology to minimize Tx-Ant loss and maximize Tx-Rx isolation performance. The very low thermal resistance (< 25ºC/W ) of the PIN diodes in these devices enables them to reliably handle RF incident power levels of 52 dBm CW and RF peak incident power levels of 57 dBm in cold switching applications at TA = 85ºC. The I layer thickness of the NIP diodes, coupled with their long minority carrier lifetime, (> 0.35µs), provides input third order intercept point (IIP3) greater than 60 dBm. This MSW2022-202 SP2T switch is designed to be used in high average and peak power switch applications, operating from 50 MHz to 1 GHz which utilize high volume, surface mount, solder re-flow manufacturing. These products are durable and capable of reliably operating in military, commercial, and industrial environments. These devices are RoHS compliant.