The MSW2030-203, MSW2031-203, and MSW2032-203 series of surface mount silicon PIN diode SP2T switches comprises three switches which can be used for high power transmit/receive (TR) switching or active receiver protection from 50 MHz to 1 GHz, 400 MHz to 4 GHz and 2 to 6 GHz respectively. These switches are manufactured using proven hybrid manufacturing process incorporating high voltage PIN diodes and passive devices integrated on a ceramic substrate. These low profile, compact, surface mount components (8 mm L x 5 mm W x 2.5 mm H) offer superior small and large signal performance compared to that of MMIC devices in QFN packages. The SP2T switches are designed in a symmetrical topology to enable either switched RF port to be used as the high-input-power-handling port, to minimize insertion loss and to maximize isolation performance. The very low thermal resistance (< 25 ºC/W) of the PIN diodes in these devices enables them to reliably handle RF incident power levels of 50 dBm CW and RF peak incident power levels of 57 dBm in cold switching applications at TA = 85 ºC. The thick I layers of the PIN diodes (> 100 µm), coupled with their long minority carrier lifetime (> 2 µs), produces input third order intercept point (IIP3) greater than 65 dBm.