The MSW2040-204 and MSW2041-204 series of surface mount silicon PIN diode SP2T switches can be used for high power transmit/receive (TR) switching or active receiver protection from 50 MHz to 1 GHz (MSW2040-204) or from 400 MHz to 4 GHz (MSW2041-204). These switches are manufactured using proven hybrid manufacturing process incorporating high voltage PIN diodes and passive devices integrated on a ceramic substrate. These low profile, compact, surface mount components (8 mm L x 5 mm W x 2.5 mm H) offer superior small and large signal performance compared to that of MMIC devices in QFN packages. The package has ultra-thin Au termination plating to combat embrittlement. The SP2T switches are designed in a symmetrical topology to enable either switched RF port to be used as the high-input-power-handling port, to minimize insertion loss and to maximize isolation performance. The very low thermal resistance (< 25 ºC/W) of the PIN diodes in these devices enables them to reliably handle RF incident power levels of 52 dBm CW and RF peak incident power levels of 57 dBm in cold switching applications at TA = 85 ºC. The thick I layers of the PIN diodes (> 100 µm), coupled with their long minority carrier lifetime (> 2 µs), produces input third order intercept point (IIP3) greater than 65 dBm.The MSW2040-204 and MSW2041-204 are optimized for use in applications for which high volume, surface mount, solder re-flow manufacturing is employed. These products are durable and capable of reliably operating in military, commercial, and industrial environments. The devices are RoHS compliant.