The MSW2060-206, MSW2061-206, and MSW2062-206 Series of Surface Mount Silicon PIN Diode SP2T Switches is manufactured using proven hybrid manufacturing process incorporating High Voltage PIN Diodes and passive devices integrated within a ceramic substrate. This low profile, compact, surface mount component, ( 8mm L x 5mm W x 2.5 mm H) offers superior low and high signal performance to comparable MMIC devices in QFN packages. The SP2T switches are designed in a symmetrical topology to optimize Insertion Loss and Isolation performance. Using PIN Diodes with lower thermal resistance (< 10 ºC/W), RF C.W. incident power levels of +50 dBm and RF peak incident power levels of + 57 dBm are very achievable in higher power cold and hot switching applications @ + 85 º C. The lower PIN Diode series resistance (< 1.0 O), coupled with the longer minority carrier lifetime, ( > 3 µS ), provides better IIP3 distortion values > +65 dBm.