The MSW3103-310 and MSW3104-310 series of surface mount silicon PIN diode SP3T switches can be used for high power transmit/receive (TR) symmetrical switching or active receiver protection from 50 MHz to 1 GHz (MSW3103-310) or from 400 MHz to 3 GHz (MSW3104-310). These switches are manufactured using proven hybrid manufacturing process incorporating high voltage PIN diodes and passive devices integrated on a ceramic substrate. These low profiles, compact, surface mount components (8 mm L x 8 mm W x 2.5 mm H) offer superior small and large signal performance compared to that of MMIC devices in QFN packages. The SP3T switches are designed in a symmetrical topology to enable switched RF port to be used as the high-input-power-handling port, to minimize insertion loss and to maximize isolation performance. The very low thermal resistance (< 25 ºC/W) of the NIP diodes in these devices enables them to reliably handle RF incident power levels of 50 dBm CW and RF peak incident power levels of 53 dBm in cold switching applications. The thick I layers of the NIP diodes (> 40 µm), coupled with their long minority carrier lifetime (> 0.3 µs), produces input third order intercept point (IIP3) greater than 65 dBm.