The MSW3200-320 and MSW3201-320 Surface Mount Silicon PIN Diode SP3T Switches are manufactured using proven hybrid manufacturing process incorporating High Voltage PIN Diodes and passive devices integrated within a ceramic substrate. This low profile, compact, surface mount component, (8 mm L x 8 mm W x 2.5 mm H) offers superior low and high signal performance to comparable MMIC devices in QFN packages. The SP3Tswitches are designed in a symmetrical topology to optimize Insertion Loss and Isolation performance. Using PIN Diodes with lower thermal resistance (< 10 ºC/W ), RF C.W. incident power levels of +50 dBm and RF peak incident power levels of + 57 dBm are very achievable in higher power cold and hot switching applications @ +85 ºC. The lower PIN Diode series resistance (< 1.0 O), coupled with the longer minority carrier lifetime, ( > 4 µS ), provides better IIP3 distortion values > + 65 dBm.