Product Detail

NPT25015
GaN Power Transistor 28 V, 23 W
The NPT25015 GaN HEMT is a power transistor optimized for DC - 3 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 23 W. This transistor is assembled in an industry standard surface mount plastic package. The NPT25015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.
Features
  • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
  • 23 W P3dB peak envelope power (PEP)
  • 1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz
  • 100% RF tested
  • Thermally-enhanced industry standard package
  • High reliability gold metallization process
  • Subject to EAR99 Export Control
  • Lead-Free
  • RoHS Compliant
Applications
  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure
Specifications
  • Supply Voltage: 28 V
  • PSAT: 23 W
  • Gain: 14 dB
  • Test Freq: 2.5 GHz
  • Max Frequency: 3,000 MHz
  • Min Frequency: 0 MHz
  • Theta J-C: 6.3 C/W
Package
  • SOIC8NE
Package Category
  • Plastic
Part Number Package MACOM Richardson RFPD DigiKey Mouser Richardson Electronics
NPT25015D
Transistor, GaN, DC-3000MHz
PO150S Buy
In Stock: 60
Buy
Buy
NPT25015DR
Transistor, GaN, DC-3000MHz, T&R
PO150S Inquire

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