NPT25015

GaN Amplifier 28 V, 23 W, DC - 3 GHz

The NPT25015 GaN HEMT is a power transistor optimized for DC - 3 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 23 W. This transistor is assembled in an industry standard surface mount plastic package. The NPT25015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.

Product Specifications

Part Number
NPT25015
Short Description
GaN Amplifier 28 V, 23 W, DC - 3 GHz
Min Frequency(MHz)
0
Max Frequency(MHz)
3000
Supply Voltage(V)
28
PSAT(W)
23.0
Gain(dB)
14.0
Test Freq(GHz)
2.50
Package
SOIC8NE
Package Category
Plastic

Features

  • Optimized for CW, pulsed, WiMAX, and other applications from DC - 3000 MHz
  • 23 W P3dB peak envelope power (PEP)
  • 1.5 W linear power @ 2% EVM for single carrier OFDM, 10.3 dB peak/average, 3.5 MHz channel bandwidth, 14 dB gain, 23.5% efficiency, 2500- 2700 MHz
  • 100% RF tested
  • Thermally-enhanced industry standard package
  • High reliability gold metallization process
  • Subject to EAR99 Export Control
  • Lead-Free
  • RoHS Compliant

Applications

  • Avionics
  • Defense Communications
  • ISM
  • land mobile radio
  • VHF/UHF/L/S-Band Radar
  • Wireless Infrastructure

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NPT25015D
Transistor,GaN,DC-3000MHz
NPT25015D Distributors