PTRA083818NF-V1

High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz

The PTRA083818NF is a 275-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 733 to 805 MHz frequency band. Features include input matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTRA083818NF-V1
Description
High Power RF LDMOS FET 275 W; 48 V; 733 - 805 MHz
Min Frequency (MHz)
500
Max Frequency(MHz)
1000
P3dB Output Power(W)
275
Gain(dB)
18.0
Efficiency(%)
56
Operating Voltage(V)
48
Package Category
Surface Mount
Form
Packaged Discrete Transistor
Technology
LDMOS

Features

  • Broadband internal input matching
  • Asymmetrical Doherty design: Main P1dB = 165 W Typ; Peak P1dB = 250 W Typ
  • Typical Pulsed CW performance; 805 MHz; 48 V; combined outputs: Output power at P1dB = 275 W; Efficiency = 59.6%; Gain = 18.6 dB
  • Capable of handling 10:1 VSWR @ 48 V; 81.3 W CW output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant

Technical Resources

Datasheet


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PTRA083818NF-V1
LDMOS RF Transistor, 733?805MHz, 275W, i