PTRA084808NF-V1

High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz

The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 734 to 821 MHz frequency band. Features include input matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTRA084808NF-V1
Description
High Power RF LDMOS FET 550 W; 48 V; 734 - 821 MHz
Min Frequency (MHz)
500
Max Frequency(MHz)
1000
P3dB Output Power(W)
550
Gain(dB)
18.0
Efficiency(%)
55
Operating Voltage(V)
48
Package Category
Plastic
Form
Packaged Discrete Transistor
Technology
LDMOS

Features

  • Broadband internal matching
  • Asymmetric design: Main P1dB = 200 W typ; Peak P1dB = 350 W typ
  • Typical pulsed CW performance (class AB); 800 MHz; 48 V; Doherty configuration: Output power at P3dB = 550 W; Effi ciency = 56%; Gain = 18.5 dB
  • Capable of handling 10:1 VSWR at 48 V; 89 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free; RoHS compliant

Technical Resources

Datasheet


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PTRA084808NF-V1
LDMOS RF Transistor, 800MHz, 480W, in HB