PTRA097058NB-V1

High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz

The PTRA097058NB is a 800-watt LDMOS FET intended for use in multistandard cellular power amplifier applications in the 730 to 960 MHz frequency band. Features include input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.

Product Specifications

Part Number
PTRA097058NB-V1
Description
High Power RF LDMOS FET; 800 W; 48 V; 730 - 960 MHz
Min Frequency (MHz)
730
Max Frequency(MHz)
960
P3dB Output Power(W)
800
Gain(dB)
18.0
Efficiency(%)
48
Operating Voltage(V)
48
Package Category
Plastic
Form
Packaged Discrete Transistor
Technology
LDMOS

Features

  • Broadband internal input and output matching
  • Asymmetric design Main: P1dB = 250 W typical Peak: P1dB = 500 W typical
  • Typical pulsed CW performance; 960 MHz; 48 V; 10 μs; 10% duty cycle; class AB test; Doherty configuration Output power at P1dB = 630 W Output power at P3dB = 800 W Efficiency = 55% Gain = 19 dB
  • Integrated ESD protection

Technical Resources

Datasheet


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PTRA097058NB-V1
800W, 48V, 730-960 MHz LDMOS FET