XP1017-BD

Power Amplifier

MACOM's two stage 30.0-36.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +33.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Product Specifications

Part Number
XP1017-BD
Short Description
30.0-36.0 GHz GaAs MMICPower AmplifierAbsolute
Min Frequency(MHz)
30000
Max Frequency(MHz)
36000
Gain(dB)
16.0
OIP3(dBm)
33.0
Output P1dB(dBm)
24.00
Package
DIE
Package Category
Die
ROHS
Yes

Features

  • Balanced Design Provides Good Input/Output Match
  • 100% Visual Inspection to MIL-STD-883Method 2010Frequency
  • 100% On-Wafer RF, DC and Output Power Testing
  • +33.0 dBm Third Order Intercept (OIP3)
  • 16.0 dB Small Signal Gain
  • On-Chip Temperature Compensated Output Power Detector

Applications

  • ISM
  • Wireless Networking and Communication

Order from MACOM

XP1017-BD-000V
MMIC,DIE,HPA,30-36G,OIP3=+33dBM,GEL PAK
XP1017-BD-000V Distributors